S. Rolland

TL;DR: In this paper, the conductivity results of the phonon-assisted hopping process in n-type GaAs at low temperatures were analyzed in terms of the percolation theory results.

Abstract: Lead telluride doped with cadmium is grown in a two temperature furnace. The cadmium content is controlled through cadmium vapor pressure. Electronic concentration and Hall mobility are measured for cadmium concentrations up to 1.65 × 1021 cm−3 at 77 and 300 K. Mobility variations are fairly explained by a model taking into account dispersion on acoustic and optical phonons, and neutral impurities. On a realise le dopage du Tellurure de Plomb par le Cadmium dans un four a deux temperatures. La concentration en Cadmium a ete ajustee a partir de la pression partielle de Cadmium. La concentration electronique et la mobilite de Hall ont ete mesurees pour des concentrations de Cadmium allant jusqu'a 1,65 × 1021 cm−3. Les variations de mobilite sont correctement interpretees par un modele prenant en compte les dispersions sur les phonons acoustiques et optiques et sur les impuretes neutres.

TL;DR: Mesure du coefficient de diffusion de Cd dans PbTe par la methode EDRI (evaporation isotherme et diffusion) afin d'obtenir des informations sur la dynamique des solutions solides CdTe-PbTe as mentioned in this paper

TL;DR: In this paper, the Hall mobility of n-GaAs samples is compared to calculated values in the low-temperature range, where ionized impurity scattering is predominant, reaching values as high as 1.5 for pure samples.

TL;DR: In this article, a numerical iterative method is proposed for n-GaAs that enables both the value of the dispersion factor rH as a function of temperature and impurity concentrations of the sample to be calculated.