S
S. Zhang
Researcher at University of Salford
Publications - 14
Citations - 314
S. Zhang is an academic researcher from University of Salford. The author has contributed to research in topics: Ion implantation & Annealing (metallurgy). The author has an hindex of 8, co-authored 14 publications receiving 312 citations.
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Journal ArticleDOI
Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si + implantation and annealing
E. Kapetanakis,Pascal Normand,Dimitris Tsoukalas,Konstantinos Beltsios,J. Stoemenos,S. Zhang,J. A. van den Berg +6 more
TL;DR: In this article, the potential of thin SiO2 oxides implanted by very low energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices.
Journal ArticleDOI
Characterization by medium energy ion scattering of damage and dopant profiles produced by ultrashallow B and As implants into Si at different temperatures
J. A. van den Berg,David George Armour,S. Zhang,S. Whelan,Hideki Ohno,Tao Wang,A. G. Cullis,E. H. J. Collart,Richard David Goldberg,P Bailey,Tcq Noakes +10 more
TL;DR: In this article, the influence of dynamic defect annealing on the damage formed in silicon substrates irradiated with ultralow energy ions (1 keV B+, 2.5 keV As+) was examined.
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Formation of 2-D arrays of semiconductor nanocrystals or semiconductor-rich nanolayers by very low-energy Si or Ge ion implantation in silicon oxide films
Pascal Normand,Konstantinos Beltsios,E. Kapetanakis,Dimitris Tsoukalas,T. Travlos,J. Stoemenos,J. A. van den Berg,S. Zhang,Christophe Vieu,H. Launois,J. Gautier,F. Jourdan,L. Palun +12 more
TL;DR: In this article, the structure evolution of annealed low-energy Si- or Ge-implanted thin and thick SiO2 layers is studied and shown that Si is able to separate and crystallize more easily than Ge.
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Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si
TL;DR: In this paper, the authors used high depth resolution medium energy ion scattering (MEIS) in the double alignment mode to determine the pre-and post-annealing damage distributions following 0.1-2.5 keV B+ implantation into Si(1 0.0-0.0) at different substrate temperatures.
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MOS memory devices based on silicon nanocrystal arrays fabricated by very low energy ion implantation
Pascal Normand,E. Kapetanakis,Dimitris Tsoukalas,G. Kamoulakos,Konstantinos Beltsios,J. A. van den Berg,S. Zhang +6 more
TL;DR: In this article, the electrical characteristics of Si nanocrystal-based MOS memory devices are studied, where the nanocrystals are fabricated into 8-nm thin oxide by very low energy Si + implantation at different doses and subsequent annealing.