S. Zybell

Bio: S. Zybell is an academic researcher from Helmholtz-Zentrum Dresden-Rossendorf. The author has contributed to research in topics: Quantum well & Laser. The author has an hindex of 2, co-authored 4 publications receiving 38 citations.

Simultaneous time and wavelength resolved spectroscopy under two-colour near infrared and terahertz excitation

Abstract: Time and wavelength resolved spectroscopy requires optical sources emitting very short pulses and a fast detection mechanism capable of measuring the evolution of the output spectrum as a function of time. We use table-top Ti:sapphire lasers and a free-electron laser (FEL) emitting ps pulses as excitation sources and a streak camera coupled to a spectrometer for detection. One of the major aspects of this setup is the synchronization of pulses from the two lasers which we describe in detail. Optical properties of the FEL pulses are studied by autocorrelation and electro-optic sampling measurements. We discuss the advantages of using this setup to perform photoluminescence quenching in semiconductor quantum wells and quantum dots. Carrier redistribution due to pulsed excitation in these heterostructures can be investigated directly. Sideband generation in quantum wells is also studied where the intense FEL pulses facilitate the detection of the otherwise weak nonlinear effect.

Photoluminescence dynamics in GaAs/AlGaAs quantum wells under pulsed intersubband excitation

Abstract: We investigate the time-resolved photoluminescence (PL) dynamics of an undoped GaAs/AlGaAs multiple quantum well under mid-infrared (MIR) irradiation. A time-delayed MIR laser pulse from a free-electron laser, tuned to the intersubband transition energy of the quantum well, induces temporal quenching of the PL intensity with subsequent recovery. The experimental data can be accurately described by a simple rate-equation model, which accounts for the cooling of the non-radiative states to radiative states. By performing polarization sensitive measurements, we are able to discriminate the contributions of free-carrier absorption from that of intersubband absorption, where the latter is about 50 times more efficient.

THz free-electron laser spectroscopy of magnetoexcitons in semiconductor quantum wells

Abstract: Transitions between the 1s and 2p levels of the fundamental heavy-hole exciton in GaAs quantum wells, followed by scattering into the 2s state, are investigated by resonant THz excitations using a free-electron laser. We report on the external control of this intra-excitonic population transfer by an external magnetic field.

Free-electron laser spectroscopy of quantum well exciton dynamics

Abstract: We report on time-resolved photoluminescence of excitons and electron-hole plasma in GaAs quantum wells under intraband excitation by a free-electron laser in resonance with intersubband and intraexcitonic transitions, respectively, to study relaxation and intraexcitonic scattering.

Ultrafast graphene-based broadband THz detector

Abstract: We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 μm to 220 μm. The detector rise time is 50 ps in the wavelength range from 30 μm to 220 μm. Autocorrelation measurements exploiting the nonlinear photocurrent response at high intensities reveal an intrinsic response time below 10 ps. This detector has a high potential for characterizing temporal overlaps, e.g., in two-color pump-probe experiments.

Ultrafast graphene-based broadband THz detector

Abstract: We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 um to 220 um. The detector rise time is 50 ps in the wavelength range from 30 um to 220 um. Autocorrelation measurements exploiting the nonlinear photocurrent response at high intensities reveal an intrinsic response time below 10 ps. This detector has a high potential for characterizing temporal overlaps, e. g. in two-color pump-probe experiments.

Note: Three wavelengths near-infrared spectroscopy system for compensating the light absorbance by water

Abstract: Given that approximately 80% of blood is water, we develop a wireless functional near-infrared spectroscopy system that detects not only the concentration changes of oxy- and deoxy-hemoglobin (HbO and HbR) during mental activity but also that of water (H2O). Additionally, it implements a water-absorption correction algorithm that improves the HbO and HbR signal strengths during an arithmetic task. The system comprises a microcontroller, an optical probe, tri-wavelength light emitting diodes, photodiodes, a WiFi communication module, and a battery. System functionality was tested by means of arithmetic-task experiments performed by healthy male subjects.

Time-resolved spectroscopy on epitaxial graphene in the infrared spectral range: relaxation dynamics and saturation behavior

Abstract: We present the results of pump–probe experiments on multilayer graphene samples performed in a wide spectral range, namely from the near infrared (photon energy 1.5 eV) to the terahertz (photon energy 8 meV) spectral range. In the near infrared, exciting carriers and probing at higher photon energies provides direct evidence for a hot carrier distribution. Furthermore, spectroscopic signatures of the highly doped graphene layers at the interface to SiC are observed in the near-infrared range. In the mid-infrared range, the various relaxation mechanisms, in particular scattering via optical phonons and Auger-type processes, are identified by comparing the experimental results to microscopic modeling. Changes from induced transmission to induced absorption are attributed to probing above or below the Fermi edge of the graphene layers. This effect occurs for certain photon energies in the near-infrared range, where it is related to highly doped graphene layers at the interface to SiC, and in the far-infrared range for the quasi-intrinsic graphene layers. In addition to the relaxation dynamics, the saturation of pump-induced bleaching of graphene is studied. Here a quadratic dependence of the saturation fluence on the pump photon energy in the infrared spectral range is revealed.

Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals

Abstract: A whole class of two-color experiments involves intense, short Terahertz radiation pulses. A fast and moderately sensitive detector capable to resolve both near-infrared and Terahertz pulses at the same time is highly desirable. Here we present the first detector of this kind. The detector element is a GaAs-based field effect transistor operated at room temperature. THz detection is successfully demonstrated at frequencies up to 4.9 THz. The THz detection time constant is shorter than 30 ps, the optical time constant is 150 ps. This detector is ideally suited for precise, simultaneous resolution of optical and THz pulses and for pulse characterization of high-power THz pulses up to tens of kW peak power levels. The dynamic range of the detector is as large as 65±3dB/Hz, enabling applications in a large variety of experiments and setups, also including table-top systems.