S
Said Elhamri
Researcher at University of Dayton
Publications - 81
Citations - 1565
Said Elhamri is an academic researcher from University of Dayton. The author has contributed to research in topics: Electron mobility & Superlattice. The author has an hindex of 18, co-authored 79 publications receiving 1435 citations. Previous affiliations of Said Elhamri include Air Force Research Laboratory & University of Massachusetts Lowell.
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Journal ArticleDOI
Heavy doping effects in Mg-doped GaN
Peter Kozodoy,Huili Xing,Steven P. DenBaars,Umesh K. Mishra,Adam William Saxler,R. Perrin,Said Elhamri,W. C. Mitchel +7 more
TL;DR: In this paper, the electrical properties of p-type Mg-doped GaN were investigated through variable-temperature Hall effect measurements, and the measured doping efficiency drops in samples with Mg concentration above 2×1020 cm−3.
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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
Elizabeth H. Steenbergen,Blair C. Connelly,Grace D. Metcalfe,Hongen Shen,Michael Wraback,Dmitri Lubyshev,Yueming Qiu,Joel M. Fastenau,Amy W. K. Liu,Said Elhamri,Oray Orkun Cellek,Yong-Hang Zhang +11 more
TL;DR: In this article, a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL) was reported.
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Two-dimensional electron gas properties of algan/gan heterostructures grown on 6h-sic and sapphire substrates
Joan M. Redwing,M. A. Tischler,Jeffrey S. Flynn,Said Elhamri,M. Ahoujja,R. S. Newrock,W. C. Mitchel +6 more
TL;DR: In this article, a temperature independent 2DEG mobility, indicative of the presence of a two-dimensional electron gas (2DEG), was observed in all samples below 80 K. This was attributed to the absence of significant parallel conduction paths in the material.
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Characterization of an AlGaN/GaN two-dimensional electron gas structure
Adam William Saxler,P. Debray,R. Perrin,Said Elhamri,W. C. Mitchel,C. R. Elsass,I. P. Smorchkova,B. Heying,E. Haus,Paul T. Fini,J. P. Ibbetson,Sarah L. Keller,Pierre Petroff,Steven P. DenBaars,Umesh Mishra,James S. Speck +15 more
TL;DR: In this paper, an AlGaN/GaN two-dimensional electron gas structure with x=0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy (OPE) on a sapphire substrate was characterized.
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Study of residual background carriers in midinfrared InAs∕GaSb superlattices for uncooled detector operation
TL;DR: The mid-infrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430°C in order to study the intrinsic characteristic of background carriers.