Saida Latreche

Bio: Saida Latreche is an academic researcher from Université de Montréal. The author has contributed to research in topics: Transistor & Heterojunction bipolar transistor. The author has an hindex of 7, co-authored 49 publications receiving 166 citations. Previous affiliations of Saida Latreche include Centre national de la recherche scientifique.

Channel length scaling and the impact of metal gate work function on the performance of double gate-metal oxide semiconductor field-effect transistors

Abstract: In this paper, we study the effects of short channel on double gate MOSFETs. We evaluate the variation of the threshold voltage, the subthreshold slope, the leakage current and the drain-induced barrier lowering when channel length LCH decreases. Furthermore, quantum effects on the performance of DG-MOSFETs are addressed and discussed. We also study the influence of metal gate work function on the performance of nanoscale MOSFETs. We use a self-consistent Poisson-Schrodinger solver in two dimensions over the entire device. A good agreement with numerical simulation results is obtained.

Compact drain-current model for undoped cylindrical surrounding-gate metal-oxide-semiconductor field effect transistors including short channel effects

Abstract: In this paper, we present a compact model for undoped short-channel cylindrical surrounding-gate MOSFETs. The drain-current model is expressed as a function of the mobile charge density, which is calculated using the analytical expressions of the surface potential and the difference between surface and center potentials model. The short-channel effects are well incorporated in the drain-current model, such as the drain-induced barrier lowering, the charge sharing effect (VT Roll-off), the subthreshold slope degradation, and the channel length modulation. A comparison of the model results with 3D numerical simulations using Silvaco Atlas-TCAD presents a good agreement from subthreshold to strong inversion regime and for different bias voltages.

Experimental Results and Modeling Techniques for Substrate Noise in Mixed-Signal Integrated Circuits

Abstract: An experimental technique is described for observing the effects of switching transients in digital MOS circuits that perturb analog circuits integrated on the same die by means of coupling through the substrate Various approaches to reducing substrate crosstalk (the use of physical separation of analog and digital circuits, guard rings, and a low-inductance substrate bias) are evaluated experimentally for a CMOS technology with a substrate comprising an epitaxial layer grown on a heavily doped bulk wafer Observations indicate that reducing the inductance in the substrate bias is the most effective Device simulations are used to show how crosstalk propagates via the heavily doped bulk and to predict the nature of substrate crosstalk in CMOS technologies integrated in uniform, lightly doped bulk substrates, showing that in such cases the substrate noise is highly dependent on layout geometry A method of including substrate effects in SPICE simulations for circuits fabricated on epitaxial, heavily doped substrates is developed >

Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

Abstract: A range of ion beam techniques have been used to fabricate a variety of photonic guiding structures in the well-known lithium niobate (LiNbO3 or LN) crystals that are of great importance in integrated photonics/optics. This paper reviews the up-to-date research progress of ion-beam-processed LiNbO3 photonic structures and reports on their fabrication, characterization, and applications. Ion beams are being used with this material in a wide range of techniques, as exemplified by the following examples. Ion beam milling/etching can remove the selected surface regions of LiNbO3 crystals via the sputtering effects. Ion implantation and swift ion irradiation can form optical waveguide structures by modifying the surface refractive indices of the LiNbO3 wafers. Crystal ion slicing has been used to obtain bulk-quality LiNbO3 single-crystalline thin films or membranes by exfoliating the implanted layer from the original substrate. Focused ion beams can either generate small structures of micron or submicron dimen...

Tuning steric and electronic effects in transition-metal β-diketiminate complexes

Abstract: β-Diketiminates are widely used supporting ligands for building a range of metal complexes with different oxidation states, structures, and reactivities. This Perspective summarizes the steric and electronic influences of ligand substituents on these complexes, with an eye toward informing the design of new complexes with optimized properties. The backbone and N-aryl substituents can give significant steric effects on structure, reactivity and selectivity of reactions. The electron density on the metal can be tuned by installation of electron withdrawing or donating groups on the β-diketiminate ligand as well. Examples are shown from throughout the transition metal series to demonstrate different types of effects attributable to systematic variation of β-diketiminate ligands.