https://tandfonline.com/doi/pdf/10.1080/14686996.2019.1599694

New development of atomic layer deposition: processes, methods and applications.

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Trench-based power semiconductor devices with increased breakdown voltage characteristics

A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fin, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain.

Semiconductor device and fabricating method thereof

This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.

Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.201801853

Progress in Powder Coating Technology Using Atomic Layer Deposition

A semiconductor component that includes an integrated passive device and method for manufacturing the semiconductor component. Vertically integrated passive devices are manufactured above a substrate. In accordance with one embodiment, a resistor is manufactured in a first level above a substrate, a capacitor is manufactured in a second level that is vertically above the first level, and a copper inductor is manufactured in a third level that is vertically above the second level. The capacitor has aluminum plates. In accordance with another embodiment, a resistor is manufactured in a first level above a substrate, a copper inductor is manufactured in a second level that is vertically above the first level, and a capacitor is manufactured in a third level that is vertically above the second level. The capacitor may have aluminum plates or a portion of the copper inductor may serve as one of its plates.

Semiconductor Component and Method of Manufacture

Atomic layer deposition (ALD) processes are reported for ruthenium (Ru) and ruthenium oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2,3-dimethylbutadiene ruthenium tricarbonyl [Ru(DMBD)(CO)3]. Both ALD Ru and RuO2 films were deposited using alternating N2 -purge-separated pulses of Ru(DMBD)(CO)3 and O2. ALD Ru metal films were deposited via short (2 s) pulses of O2. Ru films have an ALD temperature window from 290 to 320 °C with a GPC of 0.067 nm/cycle and a negligible nucleation delay on SiO2. Ru films show a strong hexagonal crystal structure with low resistivity of approximately 14 μΩ cm at 320 °C. RuO2 films were deposited using longer (20 s) pulses of either molecular O2 or O2 plasma. RuO2 films deposited via thermal ALD using molecular O2 have a temperature window from 220 to 240 °C with a GPC and nucleation delay on SiO2 of 0.065 nm/cycle and 35 cycles, respectively. Thermal ALD RuO2 films show a distinct rutile phase microstructure with a resistivity of approximately 62 μΩ cm. In ...

Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Metal–insulator–insulator–metal (MIIM) capacitors with bilayers of Al2O3 and SiO2 are deposited at 200 °C via plasma enhanced atomic layer deposition. Employing the cancelling effect between the positive quadratic voltage coefficient of capacitance ( $\alpha $ VCC) of Al2O3 and the negative $\alpha $ VCC of SiO2, devices are made that simultaneously meet the International Technology Roadmap for Semiconductors 2020 projections for capacitance density, leakage current density, and voltage nonlinearity. Optimized bilayer Al2O3/SiO2 MIIM capacitors exhibit a capacitance density of 10.1 fF/ $\mu \text{m}^{2}$ , a leakage current density of 6.8 nA/cm $^{2}$ at 1 V, and a minimized $\alpha $ VCC of −20 ppm/ $\text{V}^{2}$ .

/pdf/plasma-enhanced-atomic-layer-deposition-of-al-2-o-3-sio-2-7v6xq5c1iz.pdf

Plasma Enhanced Atomic Layer Deposition of Al 2 O 3 /SiO 2 MIM Capacitors

This paper presents the challenges of integrating 70V and 45V lateral DMOS transistor modules into a 0.18um base line process. This integration is achieved with minimal impact on baseline process and circuit IP's. Multi-epitaxial stack and Deep Trench Isolation (DTI) modules assure up to 140V isolation capability between different areas in the chip.

New modular high voltage LDMOS technology based on Deep Trench Isolation and 0.18um CMOS platform

Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe2iPr)3 and H2O at deposition temperatures between 90 and 270 °C on Si3N4, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi2O3 films deposited at 150 °C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm3, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 °C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.

/pdf/atomic-layer-deposition-of-bismuth-oxide-using-bi-ocme2ipr-3-3ruhs9lx7e.pdf

Sallie Hose

Papers

Semiconductor Component and Method of Manufacture

Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Using a Zero-Oxidation State Precursor

Plasma Enhanced Atomic Layer Deposition of Al 2 O 3 /SiO 2 MIM Capacitors

New modular high voltage LDMOS technology based on Deep Trench Isolation and 0.18um CMOS platform

Atomic layer deposition of bismuth oxide using Bi(OCMe2iPr)3 and H2O