S
Samantha Lubaba Noor
Researcher at Bangladesh University of Engineering and Technology
Publications - 18
Citations - 99
Samantha Lubaba Noor is an academic researcher from Bangladesh University of Engineering and Technology. The author has contributed to research in topics: Transistor & Threshold voltage. The author has an hindex of 3, co-authored 17 publications receiving 68 citations. Previous affiliations of Samantha Lubaba Noor include East West University & Georgia Institute of Technology.
Papers
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Journal ArticleDOI
Dual-material double-gate tunnel FET: gate threshold voltage modeling and extraction
TL;DR: In this paper, a new analytical model for the gate threshold voltage of a dual-material double-gate (DMDG) tunnel field effect transistor (TFET) was derived by solving the quasi-two-dimensional Poisson's equation in the lightly doped Si film.
Journal ArticleDOI
Physics-Based Generalized Threshold Voltage Model of Multiple Material Gate Tunneling FET Structure
TL;DR: In this paper, a generalized 2D analytical model of gate threshold voltage for multiple material gate tunneling FET (TFET) structures is derived, which includes the effect of gate and drain bias, gate material workfunction, oxide thickness, silicon film thickness, gate dielectric, and other device parameters.
Journal ArticleDOI
A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance
Proceedings ArticleDOI
Application of nanocavity embedded dual metal double gate TFET in biomolecule detection
TL;DR: In this paper, the authors analyzed the performance of nanocavity embedded dual metal double gate tunnel FET device as a label free biosensor for neutral biomolecule detection and found that the dual metal structure provides better sensitivity than the single metal counterpart.
Journal ArticleDOI
Modeling and Optimization of Plasmonic Detectors for Beyond-CMOS Plasmonic Majority Logic Gates
Samantha Lubaba Noor,Kristof Dens,Patrick Reynaert,Francky Catthoor,Dennis Lin,Pol Van Dorpe,Azad Naeemi +6 more
TL;DR: In this paper, a high-speed Ge-based plasmonic detector coupled with a Metal-Insulator-Metal (MIM) majority gate was designed to distinguish between multiple output levels of the integrated majority gate.