Showing papers by "Samit K. Ray published in 1991"
TL;DR: In this article, a microwave plasma discharge at very low temperatures (200-250°C) has been used for the growth of thin silicon oxynitride films suitable for gate dielectric applications.
Abstract: A microwave plasma discharge at very low temperatures (200–250 °C) has been used for the growth of thin silicon oxynitride films suitable for gate dielectric applications. The addition of CHF3 as a source of fluorine enhances the growth rate. A x‐ray photoelectron spectroscopy study indicates the incorporation of fluorine (F/Si≂0.2) in the film. Electrical properties of the grown layers have been evaluated by the characterization of metal‐insulator‐semiconductor capacitors. Results have indicated the presence of negative charges in the insulator. The estimated charge density is lowest for the fluorinated film. The conduction mechanism in the films at room temperature appears to be Frenkel–Poole type.
44 citations
TL;DR: In this article, the authors used hexamethyldisilazane (HMDS) as an organosilicon source for the deposition of dielectric films at low temperatures (200-250° C) by microwave plasma enhanced CVD technique.
Abstract: Hexamethyldisilazane (HMDS) has been used as an organosilicon source for the deposition of dielectric films at low temperatures (200-250° C) by microwave plasma enhanced CVD technique. Hydrogenated films of variable composition of silicon carbonitride, silicon oxynitride and silicon dioxide have been deposited by decomposition of HMDS in the presence of additive gases like NH3, O2 and H2 under different process conditions. Deposited films have been characterized by the measurement of refractive index and buffered HF etch rate, and by the analysis of XPS and infrared transmission spectra. An increase in HMDS partial pressure generally results in the decrease of refractive index. The films show stable C-V characteristics of metal-insulator-semicon-ductor (MIS) capacitors with positive insulator charge density.
11 citations
TL;DR: In this paper, dual ion beam sputtering (DIBS) was used to synthesize silicon oxynitride films of controlled composition by making simultaneous use of an energetic argon ion beam to sputter silicon nitride from a target and a low energy oxygen ion beam react with the sputtered film on the substrate.
Abstract: Silicon oxynitride films of controlled composition have been deposited on silicon by dual ion beam sputtering (DIBS) making simultaneous use of an energetic argon ion beam to sputter silicon nitride from a target and a low‐energy oxygen ion beam to react with the sputtered film on the substrate. The correspondence between film properties and oxygen beam parameters has been studied from measurements of refractive index, chemical etch rate, infrared absorption, and x‐ray photoelectron spectroscopy spectra. In situ ion beam oxidation of silicon prior to oxynitride deposition results in a film with a low insulator charge density (3.5×1011 cm−2) and interface trap density (4×1011 cm−2 eV−1).
6 citations