Showing papers by "Samit K. Ray published in 1992"
TL;DR: In this paper, the effects of the presence of oxygen in the discharge in film deposition rate, mechanism, and physical properties of the films have been investigated, and structural characterization of the deposited films has been carried out by etch rate measurements, infrared transmission spectra, x-ray photoelectron spectroscopy, Auger, and secondary ion mass spectrometry analyses.
Abstract: Silicon dioxide films have been deposited at low temperatures (200–250 °C) by microwave plasma enhanced decomposition of tetraethylorthosilicate (TEOS). The effects of the presence of oxygen in the discharge in film deposition rate, mechanism, and the physical properties of the films have been investigated. Structural characterization of the deposited films has been carried out by etch rate measurements, infrared transmission spectra, x‐ray photoelectron spectroscopy, Auger, and secondary ion mass spectrometry analyses. Films deposited using TEOS and oxygen have confirmed a density comparable to standard silane‐based low‐pressure chemical vapor deposition and plasma enhanced chemical vapor deposition oxides, nearly perfect stoichiometry, extremely low sodium and carbon content, and the absence of many undesirable hydrogen related bonds. Various electrical properties, viz., resistivity, breakdown strength, fixed oxide charge density, interface state density, and trapping behavior have been evaluated by the...
90 citations
TL;DR: In this paper, an order of increase in critical current density was observed for the patterned film, and the variation of etch rate with etch time, etchant temperature, and post-deposition sintering temperature has been studied.
Abstract: Microbridges of YBa2Cu3O7 thin films have been fabricated by conventional photolithography and wet chemical etching using EDTA, and by the lift-off lithography technique. The variation of etch rate with etch time, etchant temperature, and post-deposition sintering temperature has been studied. It has been shown that both techniques are useful for film patterning. However, an additional sintering step is necessary for the chemically etched sample to regain the original film properties. An order of increase in critical current density is observed for the patterned film.
18 citations