S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
More filters
Journal ArticleDOI
Dielectric and transport properties of carbon nanotube-CdS nanostructures embedded in polyvinyl alcohol matrix
TL;DR: In this paper, a plane-view transmission electron micrographs clearly indicate the formation of nanocrystalline CdS on the nanotube surfaces and the superior dielectric behavior of the MWCNT-CdS nanostructures over the host matrices has been demonstrated.
Journal ArticleDOI
Dynamic modelling of dissolved oxygen in the creeks of Sagar island, Hooghly–Matla estuarine system, West Bengal, India
TL;DR: In this article, a dynamic model of dissolved oxygen at Sagar island of Hooghly-Matla estuarine complex with the help of single dimension differential equation is proposed.
Journal ArticleDOI
Flexible and transparent resistive switching devices using Au nanoparticles decorated reduced graphene oxide in polyvinyl alcohol matrix
TL;DR: In this paper, the authors investigated the resistive switching mechanism in solution processed Au-reduced graphene oxide-polyvinyl alcohol (PVA) nanocomposites on flexible substrates.
Journal ArticleDOI
Correction to "Simple Growth of Faceted Au-ZnO Hetero-nanostructures on Silicon Substrates (Nanowires and Triangular Nanoflakes): A Shape and Defect Driven Enhanced Photocatalytic Performance under Visible Light.
Arnab Ghosh,Puspendu Guha,Aneeya K. Samantara,Bikash Kumar Jena,Rajshekhar Bar,Samit K. Ray,Parlapalli V. Satyam +6 more
TL;DR: The results reveal the enhanced photocatalytic capability for the triangular nanoflakes of ZnO toward RhB degradation with good reusability that can be attracted for practical applications.
Journal ArticleDOI
Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer
TL;DR: In this paper, the performance of the metal-ferroelectric-insulator-semiconductor (MFIS) structure was characterized by varying thicknesses of the HfO2 layer.