S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
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Phase, morphology and core-level electron spectroscopy of nano-sized La0.65Sr0.35MnO3 powders prepared by solution combustion synthesis
TL;DR: In this paper, the X-ray diffraction patterns of powders calcined at different temperatures were analyzed by Rietveld programme and core level photoelectron spectra of lanthanum, strontium, manganese and oxygen were studied in detail.
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Multilayer Ge nanocrystals embedded within Al2O3 matrix for high performance floating gate memory devices
TL;DR: In this article, the effect of interface traps on the memory behavior using frequency dependent capacitance-and conductance-voltage measurements has been investigated and an enhanced memory window with superior retention characteristics, owing to the Coulomb blockade effect, was demonstrated.
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Improvement of efficiency in solar cells based on vertically grown copper phthalocyanine nanorods
TL;DR: In this article, the authors used copper phthalocyanine (CuPc) nanorods as donor and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) as acceptor material.
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Enhanced mobility PMOSFETs using tensile-strained Si/sub 1-y/C y layers
TL;DR: In this article, carbon incorporation in Si epitaxial layers may be an alternative method to deposit enhanced mobility tensile-strained Si MOSFET channel layers directly on a silicon substrate, thereby eliminating the need to deposit a thick relaxed SiGe buffer layer from which dislocations and other defects can propagate to the channel region.
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Memory Characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barriers
TL;DR: In this paper, structural and electrical properties of Ni nanocrystals embedded in high-k HfO 2 have been studied using high-resolution transmission electron microscopy, which revealed the formation of tiny Ni nanoparticles in the average diameter of ∼ 8 nm size for the sample annealed at 1000°C for 5 min.