S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Heterostructure P-channel metal-oxide-semiconductor transistor utilizing a Si1-x-yGexCy channel
TL;DR: In this article, the dc characteristics of Si1−x−yGexCy P-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) were evaluated between room temperature and 77 K and were compared to those of Si and Si 1−xGex.
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Si compatible MoO3/MoS2 core-shell quantum dots for wavelength tunable photodetection in wide visible range
Suparna Pal,Suparna Pal,Subhrajit Mukherjee,Mangla Nand,Mangla Nand,Himanshu Srivastava,Himanshu Srivastava,C. Mukherjee,C. Mukherjee,Shambhu Nath Jha,Shambhu Nath Jha,Samit K. Ray +11 more
TL;DR: In this article, the authors reported that a very controlled oxidation occurs in the MoS2 colloidal QDs under the ambient condition giving rise to oxide/MoS2 core-shell structure.
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Improved charge storage characteristics of the tetralayer non-volatile memory structure using nickel nanocrystal trapping layer
TL;DR: In this article, a metal-oxide-semiconductor capacitors with a tetralayer structure consisting of nickel nanocrystals sandwiched between SiO2 and HfO2 tunnel and Al2O3 cap oxides were fabricated on p-Si substrates.
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Microstructural, chemical bonding, stress development and charge storage characteristics of Ge nanocrystals embedded in hafnium oxide
Samaresh Das,R. K. Singha,Santanu Manna,Subhashis Gangopadhyay,Anindya Sundar Dhar,Samit K. Ray +5 more
TL;DR: In this article, the authors have grown Ge nanocrystals (NCs) (4.0-9.0 nm in diameter) embedded in high-k HfO2 matrix for applications in floating gate memory devices.
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Solution-processed MoS2 quantum dot/GaAs vertical heterostructure based self-powered photodetectors with superior detectivity
TL;DR: Results indicate that colloidal MoS2/GaAs based hybrid heterostructures provide a platform for fabricating broadband photodetectors by using highly absorbing MoS 2QDs, which may show the pathway towards next-generation optoelectronic devices with superior detection properties.