S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Comparison of Si1-yCy films produced by solid-phase epitaxy and rapid thermal chemical vapour deposition
TL;DR: In this paper, a strain-compensated growth of Si 1− x − y Ge x C y with a wide range of composition was shown to be possible in the present RTCVD system at temperatures of approximately 700 °C.
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Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si1−xGex films
TL;DR: In this article, the absorption and reflection characteristics of boron-doped silicon and silicon-germanium alloys have been investigated in the frequency range from 16 to 60 THz.
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Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si
TL;DR: In this paper, the growth of size controlled Ge nanocrystals by molecular beam epitaxy on oxidized Si for the fabrication of floating gate memory structure was demonstrated and the role of interface states and nanocrystal on the memory characteristics has been studied using frequency dependent conductance-voltage measurements.
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Solution Processed Highly Responsive UV Photodetectorsfrom Carbon Nanodot/Silicon Heterojunctions
TL;DR: In this article, the authors report that carbon nanostructures technology has recently emerged as a key enabler for next-generation optoelectronic devices working in the deep UV region due to their excitonic absorption.
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Oxidation of strained Si in a microwave electron cyclotron resonance plasma
L. K. Bera,M. Mukhopadhyay,Samit K. Ray,D. K. Nayak,Noritaka Usami,Yasuhiro Shiraki,C. K. Maiti +6 more
TL;DR: In this paper, the electrical properties of grown oxide have been characterized and compared with thermally grown oxides using a metal-oxide semiconductor structure, and the accumulation of holes in the buried Si1−xGex layer, due to the type-II band offset, has been observed.