S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
More filters
Journal ArticleDOI
Cyclic deep reactive ion etching with mask replenishment
Thomas N. Adam,Sangcheol Kim,P.-C. Lv,G. Xuan,Samit K. Ray,R. T. Troeger,Dennis W. Prather,James Kolodzey +7 more
TL;DR: In this paper, a multi-step reactive ion etching (MS-RIE) process for silicon was developed for the fabrication of deep anisotropic, closely packed structures with vertical sidewalls.
Journal ArticleDOI
Resonant and non-resonant coupling of one-dimensional microcavity mode and optical Tamm state
Pratyusha Das,Subhrajit Mukherjee,Subhajit Jana,Samit K. Ray,Samit K. Ray,B N Shivakiran Bhaktha +5 more
Journal ArticleDOI
Surface potential, charging and local current transport of individual Ge quantum dots grown by molecular beam epitaxy
TL;DR: In this article, the authors demonstrate the properties of self-assembled Ge QDs, which were grown on Si substrates by solid source molecular beam epitaxy driven by the Stranski-Krastanov method.
Journal ArticleDOI
Ambient temperature carbon nanotube ammonia sensor on CMOS platform
Sumita Santra,Sumita Santra,Arun Kumar Sinha,Samit K. Ray,Syed Zeeshan Ali,Florin Udrea,Florin Udrea,Julian W. Gardner,Julian W. Gardner,Prasanta Kumar Guha,Prasanta Kumar Guha +10 more
TL;DR: In this paper, a resistive single wall carbon nanotubes (SWCNTs) sensor was developed based on a CMOS substrate that responds at ambient temperature to ppm levels of ammonia.
Journal ArticleDOI
Temperature-dependent structure and magnetism of Mn-doped Ge nanowires
TL;DR: In this paper, the growth temperature dependent phase formation and its magnetic property in Mn-doped Ge nanowires (NWs) fabricated at temperature (TG) varying from 600 to 900 C using vapor-liquid-solid technique.