S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Exfoliation of WS2 in the semiconducting phase using a group of lithium halides: a new method of Li intercalation.
TL;DR: Photodetector devices comprising solution proccessed p-WS2/n-Si heterojunctions, which behave as diodes with a high rectification ratio (>10(2)) exhibiting a broad band photoresponse over the entire visible region are successfully demonstrated.
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Nonvolatile Memristive Switching Characteristics of TiO $_{\bm 2}$ Films Embedded With Nickel Nanocrystals
TL;DR: The role of thin Ni-NC layer on memory switching stability is discussed in this article, where stable, bipolar, nonvolatile, and bistable resistive switching states are observed for the optimized annealed NiNC-embedded devices with a low SET and RESET voltage of 0.8 and -0.2 V, respectively.
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Photoelectrochemical and photosensing behaviors of hydrothermally grown ZnO nanorods
Tanmoy Majumder,J. J. L. Hmar,Kamalesh Debnath,Narendar Gogurla,Jitendra Nath Roy,Samit K. Ray,Suvra Prakash Mondal +6 more
TL;DR: In this article, the flat band voltage shift and depletion width of ZnO nanorods/electrolyte interface have been estimated from Mott-Schottky (MS) characteristics.
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A photoswitchable and photoluminescent organic semiconductor based on cation-π and carboxylate-pyridinium interactions: a supramolecular approach.
TL;DR: A crystal engineering strategy is reported for the synthesis of supramolecular two-component organic material that exhibits reversible photochromism (yellow$green) and reversible conductivity (low conductivity$high conductivity) and no organic materials have been shown to contain all these three properties in combination.
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Terahertz electroluminescence from boron-doped silicon devices
TL;DR: In this article, a single mesa facet, integrated over three closely spaced spectral lines centered about 8.1 THz, achieved a pulsed peak power of 31 μW at a current of 1.5 A and temperature of 4.4 K.