Samit K. Ray

Bio: Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.

Ion-assisted low-temperature oxidation for fabrication of strained Si1-xGex and Si1-x-yGexCy MOS capacitors

Abstract: Ion-assisted oxidation has been carried out at a substrate temperature of 150 °C for fabrication of metal-oxide-semiconductor capacitors using fully strained Si1-xGex (x = 0.2 and 0.26) and partially strained Si1-x-yGexCy (Ge:C = 20:1 and 40:1) films. The oxide thickness is designed to consume a part of the Si-cap layer, leading to the formation of a valence band quantum well for confining the carriers away from the Si-SiO2 interface. The fixed oxide charge density and mid-gap interface trap density are found to be higher for the sample containing higher Ge and C concentration. The presence of hole-trapping centres is observed for all the samples. However, a decrease in the hole trap density is observed either with the reduction of Ge content or with the increase of carbon fraction in the film.

Electrical characterization of ultra-thin gate oxides on Si/Si1-x-yGexCy/Si quantum well heterostructures

Abstract: Ultra-thin gate oxides (<100 A) have been grown on partially strain-compensated Si/Si1-x-yGexCy/Si heterolayers (with different carbon concentrations) using microwave O2-plasma. A MOS capacitor has been used for the characterization of grown oxides. Capacitance-voltage (C-V) profiling has been used to measure the apparent doping profile and thickness of the unconsumed Si-cap layer. A significant improvement in charge trapping properties, under Fowler-Nordheim (F-N) constant current stressing, has been observed for low carbon containing films. The valence band offsets (ΔEv) of Si/Si0.69Ge0.3C0.01 and Si/Si0.685Ge0.3C0.015 heterostructures have been extracted using the hole confinement characteristics. Incorporation of C lowers the valence band offset of the ternary alloy compared to those in Si1-xGex with the same Ge mole fraction.

Surface Morphology of Si1−x−y GexCy Epitaxial Films Deposited by Low Temperature UHV-CVD

Abstract: Si 1−x−y Ge x C y epitaxial films offer wider control of strain and bandgap. In such films the morphology is an important indication of the crystalline quality of the material. We report on the morphology of Si 1−x−y Ge x C y epitaxial thin films deposited by Ultra High Vacuum Chemical Vapor Deposition at a temperature of 550° C and deposition pressures ranging from 1 to 10 mTorr. The precursors used were Si 2 H 6 , GeH 4 and CH 3 SiH 3 . Germanium mole fractions ranging from 0% to 40% were studied with carbon concentrations varying from 2×10 19 to 2×10 21 atoms/cm 3 . AFM analysis of the surface indicates that the roughness is a function of both the carbon concentration and the film thickness. For high germanium concentrations with thickness beyond the critical thickness (of Si 1−x Ge x ), carbon is found to decrease the surface roughness of the film. Thus the surface morphology confirms the strain compensation provided by carbon which is also observed using XRD. For films below the critical thickness, as the carbon concentration is increased, three dimensional islanding is observed by RHEED and AFM, degrading the epitaxial quality of the material.

Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)

Abstract: We report the growth of Ge islands on Si (001) substrates with lithographically defined two-dimensionally periodic pits using focused ion-beam patterning and molecular beam epitaxy. The formation of circularly ordered Ge islands has been achieved by means of nonuniform strain field around the periphery of the holes due to ion bombardment. Lateral ordering of the Ge islands have been controlled by both the pit size and pit separation. Preferential growth at the pit sites has also been achieved by using appropriate pattern shape and size.

Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications

Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389

Principles Of Fluorescence Spectroscopy

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Nanoscale metal oxide-based heterojunctions for gas sensing: A review

Abstract: Metal oxide-based resistive-type gas sensors are solid-state devices which are widely used in a number of applications from health and safety to energy efficiency and emission control. Nanomaterials such as nanowires, nanorods, and nanoparticles have dominated the research focus in this field due to their large number of surface sites facilitating surface reactions. Previous studies have shown that incorporating two or more metal oxides to form a heterojunction interface can have drastic effects on gas sensor performance, especially the selectivity. Recently, these effects have been amplified by designing heterojunctions on the nano-scale. These designs have evolved from mixed commercial powders and bi-layer films to finely-tuned core–shell and hierarchical brush-like nanocomposites. This review details the various morphological classes currently available for nanostructured metal-oxide based heterojunctions and then presents the dominant electronic and chemical mechanisms that influence the performance of these materials as resistive-type gas sensors. Mechanisms explored include p–n and n–n potential barrier manipulation, n–p–n response type inversions, spill-over effects, synergistic catalytic behavior, and microstructure enhancement. Tables are presented summarizing these works specifically for SnO2, ZnO, TiO2, In2O3, Fe2O3, MoO3, Co3O4, and CdO-based nanocomposites. Recent developments are highlighted and likely future trends are explored.

Diversity of life

Abstract: It is clear that the above can lead to confusion when scientists of different countries are trying to communicate with each other. Another example is the burrowing rodent called a gopher found throughout the western United States. In the southeastern United States the term gopher refers to a burrowing turtle very similar to the desert tortoise found in the American southwest. One final example; two North American mammals known as the elk and the caribou are known in Europe as the reindeer and the elk. We never sing “Rudolph the Red-nosed elk”! Confused? This was the reason for creating an internationally recognized system of naming organisms. To avoid confusion, living organisms are assigned a scientific name based on Latin or Latinized words. The English sparrow is Passer domesticus or Passer domesticus (italics or underlining these two names is the official written representation of a scientific name). Using a uniform naming system allows scientists from all over the world to recognize exactly which life form a scientist is referring to. The naming process is called the binomial system of nomenclature. Passer is comparable to a surname and is called the genus, while domesticus is the specific or species name (like your given name) of the English sparrow. Now scientists can give all sparrow-like birds the genus Passer but the species name will vary. All similar genera (plural for genus) can be grouped into another, “higher” category (see below). Study the following for a more through understanding of taxonomy. Taxonomy Analogy Kingdom: Animalia Country

Environmental applications of graphene-based nanomaterials.

Abstract: Graphene-based materials are gaining heightened attention as novel materials for environmental applications The unique physicochemical properties of graphene, notably its exceptionally high surface area, electron mobility, thermal conductivity, and mechanical strength, can lead to novel or improved technologies to address the pressing global environmental challenges This critical review assesses the recent developments in the use of graphene-based materials as sorbent or photocatalytic materials for environmental decontamination, as building blocks for next generation water treatment and desalination membranes, and as electrode materials for contaminant monitoring or removal The most promising areas of research are highlighted, with a discussion of the main challenges that we need to overcome in order to fully realize the exceptional properties of graphene in environmental applications