S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
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Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix
Samit K. Ray,Kaustuv Das +1 more
TL;DR: Germanium nanocrystals embedded in silicon dioxide matrix were grown using rf magnetron sputtering and showed the formation of nearly spherical nanocrystal evenly distributed in the oxide matrix Annealed nanostructures exhibited strong and broad photoluminescence in the visible range at room temperature.
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Carrier transport mechanism in aluminum nanoparticle embedded AlQ3 structures for organic bistable memory devices
TL;DR: In this paper, the role of the thickness of the aluminum layer and the size of the nanoparticles in device performance was investigated, and the conductance switching was attributed to an electric field induced transfer of charge between aluminum nanoparticles and tris-(8-hydroxyquinoline)aluminum (AlQ3).
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Characteristics of CdS nanowires grown in a porous alumina template using a two-cell method
TL;DR: In this paper, a two-cell chemical method using a porous alumina template was used to grow CdS nanowires with diameters ranging from 100 to 110 nm and 50 to 60 nm for two different templates.
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Enhanced broadband photoresponse of Ge/CdS nanowire radial heterostructures
TL;DR: In this article, a diodelike behavior in I-V characteristics of Ge/CdS heterojunction is observed due to the formation of rectifying junction between CdS shells and Ge nanowire cores.
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Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films
TL;DR: In this paper, the effect of postdeposition annealing on the resistance switching properties of NiO/Pt structures has been discussed and the current conduction phenomena at two resistance states have been studied.