S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
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Book ChapterDOI
A Novel Room Temperature Ammonia Gas Sensor Based on Diamond-Like Nanocomposite/c-Silicon Heterojunction
Sayan Das,Sukhendu Jana,Debasish De,Utpal Gangopadhyay,Sutapa Garain,Samit K. Ray,Anup Mondal,P. Ghosh +7 more
TL;DR: In this article, thin amorphous diamond-like nanocomposite (a-DLN) films are deposited on p-type crystalline silicon (c-Si) by plasma assisted chemical vapour deposition (PACVD) technique to use it as an ammonia (NH3) gas sensor operable at room temperature.
Proceedings ArticleDOI
Characteristics of Al/SrBi 2 Ta 2 O 9 /HfO 2 /Si structure using HfO 2 as buffer layer for ferroelectric-gate field effect transistors
TL;DR: In this article, structural and electrical properties of metal-ferroelectric-insulator-semiconductor capacitors with 280-nm-thick SrBi2Ta2O9 (SBT) ferroelectric films grown on Si as well as on Si with buffer layer (HfO2).
Journal ArticleDOI
Study of Heterogeneous Interaction and Excess Thermo Dynamical Parameters in the Binary Mixtures of T-Butanol with Alkanes
Ranjita Mahapatra,Samit K. Ray +1 more
Proceedings ArticleDOI
Stimulated THz emission of acceptor-doped SiGe/Si
Miron S. Kagan,I. V. Altukhov,E. G. Chirkova,K. A. Korolev,V. P. Sinis,R. T. Troeger,Samit K. Ray,James Kolodzey +7 more
TL;DR: In this article, an intense THz emission was observed from strained SiGe/Si quantum-well structures under strong pulsed electric field, where the p-type structures were MBE-grown on n-type Si substrate and δ-doped with boron.
Posted Content
Solution Processed CMOS compatible Carbon Nano-dots Based Heterojunction for Enhanced UV Detector
TL;DR: In this paper, a solution processed Carbon nano-dots (CNDs)/n-Si heterojunction showing broadband spectral response with a peak responsivity of ~ 125 A/W in UV (~300 nm) wavelength was reported.