Showing papers by "Samuel Graham published in 2021"

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

Abstract: This review introduces relevant nanoscale thermal transport processes that impact thermal abatement in power electronics applications. Specifically, we highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices. This includes those mechanisms that impact thermal transport through: (1) substrates, (2) interfaces and two-dimensional materials, and (3) heat spreading materials. For each material layer, we provide examples of recent works that (1) demonstrate improvements in thermal performance and/or (2) improve our understanding of the relevance of nanoscale thermal transport across material junctions. We end our discussion by highlighting several additional applications that have benefited from a consideration of nanoscale thermal transport phenomena, including radio frequency (RF) electronics and neuromorphic computing. [DOI: 10.1115/1.4049293]

Thermal transport in defective and disordered materials

Abstract: With significant recent advancements in thermal sciences—such as the development of new theoretical and experimental techniques, and the discovery of new transport mechanisms—it is helpful to revisit the fundamentals of vibrational heat conduction to formulate an updated and informed physical understanding. The increasing maturity of simulation and modeling methods sparks the desire to leverage these techniques to rapidly improve and develop technology through digital engineering and multi-scale, electro-thermal models. With that vision in mind, this review attempts to build a holistic understanding of thermal transport by focusing on the often unaddressed relationships between subfields, which can be critical for multi-scale modeling approaches. For example, we outline the relationship between mode-specific (computational) and spectral (analytical) models. We relate thermal boundary resistance models based on perturbation approaches and classic transmissivity based models. We discuss the relationship between lattice dynamics and molecular dynamics approaches along with two-channel transport frameworks that have emerged recently and that connect crystal-like and amorphous-like heat conduction. Throughout, we discuss best practices for modeling experimental data and outline how these models can guide material-level and system-level design.

High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films.

Abstract: High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their applicability to functional devices. In this work, we report on high in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance. At room temperature, the AlN films possess an in-plane thermal conductivity of ∼260 ± 40 W m-1 K-1, one of the highest reported to date for any thin film material of equivalent thickness. At low temperatures, the in-plane thermal conductivities of the AlN films surpass even those of diamond thin films. Phonon-phonon scattering drives the in-plane thermal transport of these AlN thin films, leading to an increase in thermal conductivity as temperature decreases. This is opposite of what is observed in traditional high thermal conductivity thin films, where boundaries and defects that arise from film growth cause a thermal conductivity reduction with decreasing temperature. This study provides insight into the interplay among boundary, defect, and phonon-phonon scattering that drives the high in-plane thermal conductivity of the AlN thin films and demonstrates that these AlN films are promising materials for heat spreaders in electronic devices.

Experimental observation of localized interfacial phonon modes.

Abstract: Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance. Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy-resolution electron energy-loss spectroscopy in a scanning transmission electron microscope, we report the experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield thermal boundary conductance agreeing well with that measured in time-domain thermoreflectance experiments. Simulations find that the interfacial phonon modes have an obvious contribution to the total thermal boundary conductance. Our findings significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering thermal boundary conductance at interfaces in applications such as electronics thermal management and thermoelectric energy conversion. Conventional theories for interfacial thermal transport are derived from bulk phonon properties. Here, the authors report experimental observation of interfacial phonon modes localized at interfaces, changing how interfacial thermal transport should be understood.

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Abstract: Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1−xN, x is the Al composition), β-phase gallium oxide (β-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1−xN and β-Ga2O3. This Perspective delineates the need and process for the “electro-thermal co-design” of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

Polycrystalline diamond growth on β-Ga2O3 for thermal management

Abstract: We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m−1 K−1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G−1 W−1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.

Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers

Abstract: GaN radio frequency (RF) power amplifiers offer many benefits including high power density, reduced device footprint, high operating voltage, and excellent gain and power-added efficiency. Accordingly, these parts are enabling next-generation technologies such as fifth-generation (5G) base transceiver stations and defense/aerospace applications such as high-performance radar and communication systems. However, these benefits can be overshadowed by device overheating that compromises the performance and reliability. In response to this, researchers have focused on GaN-on-diamond integration during the past decade. However, manufacturability, scalability, and long-term reliability remain as critical challenges toward the commercialization of the novel device platform. In this work, a diamond-incorporated flip-chip integration scheme is proposed that takes advantage of existing semiconductor device processing and growth techniques. Using an experimentally validated GaN-on-SiC multifinger device model, the theoretical limit of the cooling effectiveness of the device-level thermal management solution has been evaluated. Simulation results show that by employing a $\sim 2-\mu \text{m}$ diamond passivation overlayer, gold thermal bumps, and a commercial polycrystalline carrier wafer, the power amplifier’s dissipated heat can be effectively routed toward the package, which leads to a junction-to-package thermal resistance lower than GaN-on-diamond high electron mobility transistors (HEMTs). Furthermore, simulation results show that this approach is even more promising for lowering the device thermal resistance of emerging ultra-wide bandgap devices based on $\beta $ -Ga2O3 and AlGaN, below that for today’s state-of-the-art GaN-on-diamond HEMTs.

Thermal management strategies for gallium oxide vertical trench-fin MOSFETs

Abstract: Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by their geometry for thermal management, represent a promising solution to the thermal problems frequently encountered in lateral β-Ga2O3 devices. Here, we investigate potential thermal-management strategies for a vertical β-Ga2O3 trench-fin MOSFET through parametric analysis, offering recommendations on how best to design a device for maximal current density and excellent thermal performance. Primarily, by using a thermally conductive dielectric over the MOSFET structure, significant improvements to device power density may be achieved, aided by thermal spreading. Additionally, we find that by bonding thermal spreaders to its topside can yield significant improvements in thermal performance.

Thermal Transport across Metal/β-Ga2O3 Interfaces.

Abstract: In this work, we study the thermal transport at β-Ga2O3/metal interfaces, which play important roles in heat dissipation and as electrical contacts in β-Ga2O3 devices. A theoretical Landauer approach was used to model and elucidate the factors that impact the thermal transport at these interfaces. Experimental measurements using time-domain thermoreflectance (TDTR) provided data for the thermal boundary conductance (TBC) between β-Ga2O3 and a range of metals used to create both Schottky and ohmic electrical contacts. From the modeling and experiments, the relation between the metal cutoff frequency and the corresponding TBC is observed. Moreover, the effect of the metal cutoff frequency on TBC is seen as the most significant factor followed by chemical reactions and defects between the metal and the β-Ga2O3. Among all β-Ga2O3/metal interfaces, for Schottky contacts, Ni/β-Ga2O3 interfaces show the highest TBC, while for ohmic contacts, Cr/β-Ga2O3 interfaces show the highest TBC. While there is a clear correlation between TBC and the phonon cutoff frequency of metal contacts, it is also important to control the chemical reactions and other defects at interfaces to maximize the TBC in this system.

Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance.

Abstract: Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques that can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency time-domain thermoreflectance (TDTR) mapping technique (1.61 and 9.3 MHz) to visualize the thermal conduction across buried semiconductor interfaces for β-Ga2O3-SiC samples. Both the β-Ga2O3 thermal conductivity and the buried β-Ga2O3-SiC thermal boundary conductance (TBC) are visualized for an area of 200 × 200 μm simultaneously. Areas with low TBC values (≤20 MW/m2·K) are identified on the TBC map, which correspond to weakly bonded interfaces caused by high-temperature annealing. Additionally, the steady-state temperature rise induced by the TDTR laser, usually ignored in TDTR analysis, is found to be able to probe TBC variations of the buried interfaces without the typical limit of thermal penetration depth. This technique can be applied to detect defects/voids in deeply buried heterogeneous interfaces nondestructively and also opens a door for the visualization of thermal conductance in nanoscale nonhomogeneous structures.

High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films

Abstract: Gallium nitride (GaN) has emerged as a quintessential wide band-gap semiconductor for an array of high-power and high-frequency electronic devices. The phonon thermal resistances that arise in GaN thin films can result in detrimental performances in these applications. In this work, we report on the thermal conductivity of submicrometer and micrometer thick homoepitaxial GaN films grown via two different techniques (metal-organic chemical vapor deposition and molecular beam epitaxy) and measured via two different techniques (time domain thermoreflectance and steady-state thermoreflectance). When unintentionally doped, these homoepitaxial GaN films possess higher thermal conductivities than other heteroepitaxially grown GaN films of equivalent thicknesses reported in the literature. When doped, the thermal conductivities of the GaN films decrease substantially due to phonon-dopant scattering, which reveals that the major source of phonon thermal resistance in homoepitaxially grown GaN films can arise from doping. Our temperature-dependent thermal conductivity measurements reveal that below 200 K, scattering with the defects and GaN/GaN interface limits the thermal transport of the unintentionally doped homoepitaxial GaN films. Further, we demonstrate the ability to achieve the highest reported thermal boundary conductance at metal/GaN interfaces through in situ deposition of aluminum in ultrahigh vacuum during molecular beam epitaxy growth of the GaN films. Our results inform the development of low thermal resistance GaN films and interfaces by furthering the understanding of phonon scattering processes that impact the thermal transport in homoepitaxially grown GaN.

Thermal Management of β -Ga₂O₃ Current Aperture Vertical Electron Transistors

Abstract: Beta-gallium oxide ( $\beta $ -Ga2O3) has attracted considerable attention for power devices due to its superior properties and the availability of device-quality native substrates compared to gallium nitride (GaN) technologies. In particular, devices such as the current aperture vertical electron transistor (CAVET) have a higher breakdown voltage compared to lateral transistors made from $\beta $ -Ga2O3. However, because of the low thermal conductivity of $\beta $ -Ga2O3, thermal management strategies at the device level are required in order to achieve high power operation. Here, we present a thermal modeling study of CAVET power transistors and analyze the impact of thermal management strategies on their thermal performance. Among the various cooling strategies, double-side cooling has the largest impact on device cooling. Double-side cooling in combination with a heat spreader can suppress the device’s thermal resistance from 24.5 to 4.86 mm $\cdot ^{\circ }\text{C}$ /W, allowing for a high-power-density CAVET device. The modeling and analysis results presented in this work can be utilized as a guide for improvement of the vertical $\beta $ -Ga2O3 device performance for future power electronics applications.

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications

Abstract: The development of high thermal conductivity thin film materials for the thermal management of electronics requires accurate and precise methods for characterizing heat spreading capability, namely, in-plane thermal conductivity. However, due to the complex nature of thin film thermal property measurements, resolving the in-plane thermal conductivity of high thermal conductivity anisotropic thin films with high accuracy is particularly challenging. Capable transient techniques exist; however, they usually measure thermal diffusivity and require heat capacity and density to deduce thermal conductivity. Here, we present an explicit uncertainty analysis framework for accurately resolving in-plane thermal conductivity via two independent steady-state thermometry techniques: particle-assisted Raman thermometry and electrical resistance thermometry. Additionally, we establish error-based criteria to determine the limiting experimental conditions that permit the simplifying assumption of one-dimensional thermal conduction to further reduce thermal analysis. We demonstrate the accuracy and precision (<5% uncertainty) of both steady-state techniques through in-plane thermal conductivity measurements of anisotropic nanocrystalline diamond thin films.

Understanding supercooling mechanism in sodium sulfate decahydrate phase-change material

Abstract: Salt hydrate-based phase-change materials are considered promising for future heat storage applications in residential heating/cooling systems. Smooth phase transition from the liquid to solid phase and vice versa is essential for effective heat exchanger; however, supercooling in salt hydrates delays the onset of liquid–solid phase transition. We investigate the molecular level mechanism of supercooling in sodium sulfate decahydrate (SSD). SSD is a complex salt hydrate whose properties are governed by electrostatic forces that include pure Coulombic interactions as well as hydrogen bonds. Experimentally, we examine the importance of a nucleator in reducing supercooling temperatures. We investigated the effect of various mass concentrations of a borax nucleator on a decrease of supercooling temperatures. Molecular dynamics simulation techniques are used to obtain a basic understanding of supercooling in SSD. We observe that by introducing borax as a nucleator, there is a decrease in the supercooling temperature before nucleation. Our molecular dynamics simulations show that long-range electrostatics between sodium and sulfate ion pairs and that with polar water molecules is responsible for delayed nucleation in SSD that results in supercooling, and also, dynamics of charged molecules slows down. The lack of crystallization leads to amorphous structures in supercooled SSD.

Thermal resistance at a twist boundary and a semicoherent heterointerface

Abstract: Traditional models of interfacial phonon scattering, including the acoustic mismatch model and diffuse mismatch model, take into account the bulk properties of the material surrounding the interface, but not the atomic structure and properties of the interface itself. Here, we derive a theoretical formalism for the phonon scattering at a dislocation grid, or two interpenetrating orthogonal arrays of dislocations, as this is the most stable structure of both the symmetric twist boundary and semicoherent heterointerface. With this approach, we are able to separately examine the contribution to thermal resistance due to the step-function change in acoustic properties and due to interfacial dislocation strain fields, which induces diffractive scattering. Both low-angle Si-Si twist boundaries and the Si-Ge heterointerfaces are considered here and compared to previous experimental and simulation results. This work indicates that scattering from misfit dislocation strain fields doubles the thermal boundary resistance of Si-Ge heterointerfaces compared to scattering due to acoustic mismatch alone. Scattering from grain boundary dislocation strain fields is predicted to dominate the thermal boundary resistance of Si-Si twist boundaries. This physical treatment can guide the thermal design of devices by quantifying the relative importance of interfacial strain fields, which can be engineered via fabrication and processing methods, versus acoustic mismatch, which is fixed for a given interface. Additionally, this approach captures experimental and simulation trends such as the dependence of thermal boundary resistance on the grain boundary angle and interfacial strain energy.

Thermal science and engineering of β-Ga2O3 materials and devices

Abstract: β-Ga2O3 is a promising ultrawide bandgap semiconductor under development for power electronics and RF applications. However, the low thermal conductivity of β-Ga2O3 presents challenges for creating high power devices and managing the thermal loads without exceeding thermal limits. In this chapter, we cover the anisotropic thermal conductivity of β-Ga2O3 and the anisotropic thermal boundary conductance between β-Ga2O3 and metal contacts. These properties play a major role in the way devices dissipate heat. Next, these properties are used to explore how different device architectures and cooling strategies can be used to improve heat dissipation, namely cooling from the bottom side, top side, or double side cooling of β-Ga2O3 field-effect transistors.

Self-Heating and Quality Factor: Thermal Challenges in Aluminum Scandium Nitride Bulk Acoustic Wave Resonators

Abstract: Understanding the thermal properties of piezoelectric thin films is essential in studying the performance and ultimate dissipation limits of bulk acoustic wave resonators. Here, we present the experimental and modeled results of thermal conductivity of the in-demand piezoelectric material aluminum scandium nitride (Al 1-x Sc x N), with x = Sc/(Sc+Al) ratio. We construct the three-dimensional (3D) finite-element modeling (FEM) of a back-side etched thin-film bulk acoustic wave resonator (FBAR) with aluminum nitride (AlN) and Al 0.7 Sc 0.3 N thin films. Comparison reveals a 26% more temperature rise in Al 0.7 Sc 0.3 N FBAR with equal input surface heat density of 2 W/mm2. The trend is consistent with the drastic decrease of thermal conductivity with increasing x in Al 1-x S cx N. Consequently, as we study the upper limit of the frequency (f), quality factor (Q) product (f. Q) under phonon interactions, Al 1-x S cx N exhibits a greater amount of degradation due to self-heating. This work reports the first comparison of thermal properties of AlN and Al 1-x S cx N resonators, critical in material selection for resonator operation under high power levels.

Diffuson-mediated thermal and ionic transport in superionic conductors

Abstract: Ultra-low lattice thermal conductivity as often found in superionic compounds is greatly beneficial for thermoelectric performance, however, a high ionic conductivity can lead to device degradation. Conversely, high ionic conductivities are searched for materials in solid-state battery applications. It is commonly thought that ionic transport induces low thermal conductivity and that ion and thermal transport are not completely independent properties of a material. However, no direct comparison or underlying physical relationship has been shown between the two. Here we establish that ionic transport can be varied independent of thermal transport in Ag+ superionic conductors, even though both phenomena arise from atomic vibrations. Thermal conductivity measurements, in conjunction with two-channel lattice dynamics modeling, reveals that the vast majority of Ag+ vibrations have non-propagating diffuson-like character, which provides a rational for how these two transport properties can be independent. Our results provide conceptually novel lattice dynamical insights to ionic transport and confirm that ion transport is not a requirement for ultra-low thermal conductivity. Consequently, this work bridges the fields of solid state ionics and thermal transport, thus providing design strategies for functional ionic conducting materials from a vibrational perspective.

Simultaneous Evaluation of Heat Capacity and In-plane Thermal Conductivity of Nanocrystalline Diamond Thin Films

Abstract: As wide bandgap electronic devices have continued to advance in both size reduction and power handling capabilities, heat dissipation has become a significant concern. To mitigate this, chemical vapor deposited (CVD) diamond has been demonstrated as an effective solution for thermal management of these devices by directly growing onto the transistor substrate. A key aspect of power and radio frequency (RF) electronic devices involves transient switching behavior, which highlights the importance of understanding the temperature dependence of the heat capacity and thermal conductivity when modeling and predicting device electrothermal response. Due to the complicated microstructure near the interface between CVD diamond and electronics, it is difficult to measure both properties simultaneously. In this work, we use time domain thermoreflectance (TDTR) to simultaneously measure the in plane thermal conductivity and heat capacity of a 1 um thick CVD diamond film, and also use the pump as an effective heater to perform temperature dependent measurements. The results show that the in plane thermal conductivity varied slightly with an average of 103 W per meter per K over a temperature range of 302 to 327 K, while the specific heat capacity has a strong temperature dependence over the same range and matches with heat capacity data of natural diamond in literature.

Dielectric Fluids for the Direct Forced Convection Cooling of Power Electronics

Abstract: The future of electrification of vehicles and other systems will require the creation of high-power density power electronics with low junction-to-fluid thermal resistance cooling solutions. One way to create this solution is to move high-heat-flux liquid cooling (single- or two-phase) as close to the power electronics components as possible. One novel approach involves submersion in dielectric fluids as the cooling solution. We first provide the range of fluid properties and develop a figure of merit (FOM) to aid in dielectric fluid selection. Next, we perform computational fluid dynamics/heat transfer (CFD/HT) modeling using single-phase cooling (submerged jet impingement on an enhanced surface) to validate the dielectric fluid FOM. Results of the study show that the developed FOM is a good representation of the performance of the fluids when compared to the results of the CFD/HT analysis. Both FOM and the CFD/HT analysis show that based on pure thermohydraulic considerations, several commercially available fluids present higher performance, on the order of 5% of water. Finally, the FOM can be used to quickly assess the thermohydraulic performance of a dielectric fluid, as well as the secondary application-specific properties such as boiling point, saturation pressure, flash point, and global warming potential, thereby allowing for fluid candidates to be readily compared.

Thermoreflectance Imaging of (Ultra)wide Band-Gap Devices with MoS2 Enhancement Coatings.

Abstract: Measuring the maximum operating temperature within the channel of ultrawide band-gap transistors is critically important since the temperature dependence of the device reliability sets operational limits such as maximum operational power. Thermoreflectance imaging (TTI) is an optimal choice to measure the junction temperature due to its submicrometer spatial resolution and submicrosecond temporal resolution. Since TTI is an imaging technique, data acquisition is orders of magnitude faster than point measurement techniques such as Raman thermometry. Unfortunately, commercially available LED light sources used in thermoreflectance systems are limited to energies less than ∼3.9 eV, which is below the band gap of many ultrawide band-gap semiconductors (>4.0 eV). Therefore, the semiconductors are transparent to the probing light sources, prohibiting the application of TTI. To address this thermal imaging challenge, we utilize an MoS2 coating as a thermoreflectance enhancement coating that allows for the measurement of the surface temperature of (ultra)wide band-gap materials. The coating consists of a network of MoS2 nanoflakes with the c axis aligned normal to the surface and is easily removable via sonication. The method is validated using electrical and thermal characterization of GaN and AlGaN devices. We demonstrate that this coating does not measurably influence the electrical performance or the measured operating temperature. A maximum temperature rise of 49 K at 0.59 W was measured within the channel of the AlGaN device, which is over double the maximum temperature rise obtained by measuring the thermoreflectance of the gate metal. The importance of accurately measuring the peak operational temperature is discussed in the context of accelerated stress testing.

Experimental Observation of Localized Interfacial Phonon Modes

Abstract: Interfaces impede heat flow in micro/nanostructured systems. Conventional theories for interfacial thermal transport were derived based on bulk phonon properties of the materials making up the interface without explicitly considering the atomistic interfacial details, which are found critical to correctly describing thermal boundary conductance (TBC). Recent theoretical studies predicted the existence of localized phonon modes at the interface which can play an important role in understanding interfacial thermal transport. However, experimental validation is still lacking. Through a combination of Raman spectroscopy and high-energy resolution electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope, we report the first experimental observation of localized interfacial phonon modes at ~12 THz at a high-quality epitaxial Si-Ge interface. These modes are further confirmed using molecular dynamics simulations with a high-fidelity neural network interatomic potential, which also yield TBC agreeing well with that measured from time-domain thermoreflectance (TDTR) experiments. Simulations find that the interfacial phonon modes have obvious contribution to the total TBC. Our findings may significantly contribute to the understanding of interfacial thermal transport physics and have impact on engineering TBC at interfaces in applications such as electronics thermal management and thermoelectric energy conversion.

Integrating boron arsenide into power devices

Abstract: Boron arsenide could be used as a high-thermal-conductivity cooling substrate in gallium nitride power devices.

The effectiveness of heat extraction by the drain metal contact of β-Ga 2 O 3 MOSFETs

Abstract: Beta-phase gallium oxide (β-Ga2O3) has garnered considerable attention for power devices due to (i) its large critical electric field strength and (ii) the availability of low cost/high quality melt-grown substrates, both of which are advantages over silicon carbide (SiC) and gallium nitride (GaN). However, because of the low thermal conductivity of β-Ga2O3, thermal management strategies at the device-level are required to achieve high-power operation. In this work, electrically identical MOSFETs (fixed current channel length) with varying spacings between the gate electrode and drain metal contact (thus, thermally different) have been fabricated, to study the effectiveness of heat extraction by the drain metal electrode. Results show that the topside features of lateral β-Ga2O3 MOSFETs are important in both electrical and thermal design perspectives.

Quasi-Ballistic Thermal Conduction in 6H-SiC.

Abstract: The minimization of electronics makes heat dissipation of related devices an increasing challenge. When the size of materials is smaller than the phonon mean free paths, phonons transport without internal scatterings and laws of diffusive thermal conduction fail, resulting in significant reduction in the effective thermal conductivity. This work reports, for the first time, the temperature dependent thermal conductivity of doped epitaxial 6H-SiC and monocrystalline porous 6H-SiC below room temperature probed by time-domain thermoreflectance. Strong quasi-ballistic thermal transport was observed in these samples, especially at low temperatures. Doping and structural boundaries were applied to tune the quasi-ballistic thermal transport since dopants selectively scatter high-frequency phonons while boundaries scatter phonons with long mean free paths. Exceptionally strong phonon scattering by boron dopants are observed, compared to nitrogen dopants. Furthermore, orders of magnitude reduction in the measured thermal conductivity was observed at low temperatures for the porous 6H-SiC compared to the epitaxial 6H-SiC. Finally, first principles calculations and a simple Callaway model are built to understand the measured thermal conductivities. Our work sheds light on the fundamental understanding of thermal conduction in technologically-important wide bandgap semiconductors such as 6H-SiC and will impact applications such as thermal management of 6H-SiC-related electronics and devices.

Thermal Visualization of Buried Interfaces by Transient and Steady-State Responses of Time-Domain Thermoreflectance

Abstract: Thermal resistances from interfaces impede heat dissipation in micro/nanoscale electronics, especially for high-power electronics. Despite the growing importance of understanding interfacial thermal transport, advanced thermal characterization techniques which can visualize thermal conductance across buried interfaces, especially for nonmetal-nonmetal interfaces, are still under development. This work reports a dual-modulation-frequency TDTR mapping technique to visualize the thermal conduction across buried semiconductor interfaces for beta-Ga2O3-SiC samples. Both the beta-Ga2O3 thermal conductivity and the buried beta-Ga2O3-SiC thermal boundary conductance (TBC) are visualized for an area of 200 um x 200 um. Areas with low TBC values ( smaller than 20 MW/m2-K) are successfully identified on the TBC map, which correspond to weakly bonded interfaces caused by high-temperature annealing. The steady-state temperature rise (detector voltage), usually ignored in TDTR measurements, is found to be able to probe TBC variations of the buried interfaces without the limit of thermal penetration depth. This technique can be applied to detect defects/voids in deeply buried heterogeneous interfaces non-destructively, and also opens a door for the visualization of thermal conductance in nanoscale nonhomogeneous structures.