S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Journal ArticleDOI
Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging
Ronald J. Warzoha,Adam A. Wilson,Brian F. Donovan,Nazli Donmezer,Ashutosh Giri,Patrick E. Hopkins,Sukwon Choi,Darshan G. Pahinkar,Jingjing Shi,Samuel Graham,Zhiting Tian,Laura B. Ruppalt +11 more
TL;DR: In this paper, the authors highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices, including those mechanisms that impact thermal transport through: substrates, interfaces and two-dimensional materials, and heat spreading materials.
Journal ArticleDOI
Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
TL;DR: In this paper, the water stability of ALD deposited alumina barrier films capped with nickel oxide (NiOx) and titanium oxide (TiOx) thin films was evaluated by measuring their ability to protect zinc oxide (ZnO) thin film sensors immersed in deionized (DI) water.
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Systematic reliability study of top-gate p- and n-channel organic field-effect transistors.
Do Kyung Hwang,Canek Fuentes-Hernandez,Mathieu Fenoll,Mathieu Fenoll,Minseong Yun,Jihoon Park,Jae Won Shim,Keith A. Knauer,Amir Dindar,Hyungchul Kim,Yongjin Kim,Jungbae Kim,Hyeunseok Cheun,Marcia M. Payne,Samuel Graham,Seongil Im,John E. Anthony,Bernard Kippelen +17 more
TL;DR: Top-gate OFETs display outstanding durability, even when exposed to oxygen plasma and subsequent immersion in water or operated under aqueous media, as a consequence of the use of relatively air stable organic semiconductors and proper engineering of the OFET structure.
Journal ArticleDOI
Thermal transport in defective and disordered materials
Riley Hanus,Ramya Gurunathan,Lucas Lindsay,Matthias T. Agne,Jingjing Shi,Samuel Graham,G. Jeffrey Snyder +6 more
TL;DR: This review attempts to build a holistic understanding of thermal transport by focusing on the often unaddressed relationships between subfields, which can be critical for multi-scale modeling approaches.
Proceedings ArticleDOI
Analysis and characterization of thermal transport in GaN HEMTs on Diamond substrates
David H. Altman,Matthew Tyhach,James McClymonds,Samuel Kim,Samuel Graham,Jungwan Cho,Kenneth E. Goodson,Daniel Francis,Firooz Faili,Felix Ejeckam,Steven Bernstein +10 more
TL;DR: In this article, the authors investigated thermal properties in GaN on diamond substrates and temperature measurement of operational GaN-on-Diamond HEMTs, employing electro-thermal modeling of the HEMT devices to interpret and relate data.