S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Journal ArticleDOI
Engineering the Mechanical Properties of Ultrabarrier Films Grown by Atomic Layer Deposition for the Encapsulation of Printed Electronics
Anuradha Bulusu,Ankit Singh,Cheng-Yin Wang,Amir Dindar,Canek Fuentes-Hernandez,Hyungchul Kim,David A. Cullen,Bernard Kippelen,Samuel Graham,Samuel Graham +9 more
TL;DR: In this paper, the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) nanolaminate barrier films was evaluated on a fluorinated polymer layer using an optical calcium (Ca) test under damp heat.
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Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics
Namsu Kim,Samuel Graham +1 more
TL;DR: A flexible thin-film encapsulation architecture for organic electronics was built and consisted of a silicon oxide/alumina and parylene layer deposited over Ca sensors on a barrier-coated polyethylene terephthalate substrate as discussed by the authors.
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Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy.
Zhe Cheng,Tingyu Bai,Jingjing Shi,Tianli Feng,Tianli Feng,Yekan Wang,Matthew Mecklenburg,Chao Li,Karl D. Hobart,Tatyana I. Feygelson,Marko J. Tadjer,Bradford B. Pate,Brian M. Foley,Luke Yates,Sokrates T. Pantelides,Sokrates T. Pantelides,Baratunde A. Cola,Mark S. Goorsky,Samuel Graham +18 more
TL;DR: In this article, the authors grow chemical vapor-deposited diamond on silicon substrates by graphoepitaxy and experimentally demonstrate tunable thermal transport across diamond membranes and diamond-silicon interfaces.
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Experimental observation of high intrinsic thermal conductivity of AlN
Zhe Cheng,Yee Rui Koh,Abdullah Mamun,Jingjing Shi,Tingyu Bai,Kenny Huynh,Luke Yates,Zeyu Liu,Ruiyang Li,Eungkyu Lee,Michael E. Liao,Yekan Wang,Hsuan Ming Yu,Maki Kushimoto,Tengfei Luo,Mark S. Goorsky,Patrick E. Hopkins,Hiroshi Amano,Asif Khan,Samuel Graham +19 more
TL;DR: In this article, the authors reported the growth of thick (g15 \ensuremath{mu}m) AlN layers by metal-organic chemical vapor deposition and experimental observation of intrinsic thermal conductivity from 130 to 480 K that matches density-functional-theory calculations for single crystal AlN, producing some of the highest values ever measured.
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Stress relaxation in GaN by transfer bonding on Si substrates
TL;DR: In this paper, the stress state of GaN epilayers transferred onto Si substrates through a Au-Si bonding process was studied by micro-Raman scattering and photoluminescence techniques.