S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Journal ArticleDOI
Near-isothermal-isobaric compressed gas energy storage
Adewale Odukomaiya,Edem Kokou,Zaky Hussein,Ahmad Abu-Heiba,Samuel Graham,Samuel Graham,Ayyoub M. Momen +6 more
TL;DR: In this article, the effectiveness of storing energy by compressing and expanding a condensable gas is evaluated, and a miniature lab-scale experimental setup was designed and built to investigate the compression/expansion characteristics and energy storage efficiency of a system utilizing R134a as the energy storage (primary) working fluid, and mineral refrigerant oil as the liquid piston (secondary) fluid.
Journal ArticleDOI
Thermal charging study of compressed expanded natural graphite/phase change material composites
TL;DR: In this paper, the thermal charging performance of paraffin wax combined with compressed expanded natural graphite foam was studied for different graphite bulk densities, and the energy storage performance was calculated to show the effects of composite thermal conductivity, graphite density, and latent heat capacity.
Journal ArticleDOI
Carbon nanotube thermal interfaces enhanced with sprayed on nanoscale polymer coatings.
John H. Taphouse,Thomas L. Bougher,Virendra Singh,Parisa Pour Shahid Saeed Abadi,Samuel Graham,Baratunde A. Cola +5 more
TL;DR: Vertical carbon nanotube (CNT) forests bonded at room temperature with sprayed on nanoscale polymer coatings are found by measurement to produce thermal resistances that are on a par with those of conventional metallic solders.
Journal ArticleDOI
Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy
TL;DR: In this paper, the authors demonstrate a technique to quantify the magnitude of operational thermoelastic stress that evolves in a gallium nitride (GaN) transistor through simultaneous use of the Raman signal's Stokes peak position and linewidth.
Proceedings ArticleDOI
Thermal management methods for compact high power LED arrays
TL;DR: In this paper, a thermal resistor network model was combined with a 3D finite element submodel of an LED structure to predict system and die level temperatures, and the impact of LED array density, LED power density, and active versus passive cooling methods on device operation was calculated.