S
Samuel Graham
Researcher at Georgia Institute of Technology
Publications - 361
Citations - 12423
Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.
Papers
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Proceedings ArticleDOI
Thermal metrology of silicon microstructures using Raman spectroscopy
Mark R. Abel,Tanya L. Wright,Erik Oscar Sunden,Samuel Graham,William P. King,Michael J. Lance +5 more
TL;DR: In this article, the effects of temperature and stress on the Raman shift in single crystal silicon and polycrystalline silicon films were calibrated and the dependencies of the linear coefficients were related to the polysilicon microstructure using AFM surface scans.
Proceedings ArticleDOI
Rates and mechanisms of optic contamination in the EUV engineering test stand
TL;DR: In this article, the first ETS condenser component, referred to as C1, is coated with Mo/Si multilayers, and it was found to have a deposition rate of 3 angstrom / 10 million shots.
Journal ArticleDOI
Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers
Daniel Shoemaker,Mohamadali Malakoutian,Bikramjit Chatterjee,Yiwen Song,Samuel Kim,Brian M. Foley,Samuel Graham,Christopher D. Nordquist,Srabanti Chowdhury,Sukwon Choi +9 more
TL;DR: In this article, a diamond-incorporated flip-chip integration scheme is proposed that takes advantage of existing semiconductor device processing and growth techniques to reduce device-level thermal management.
Journal ArticleDOI
The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
TL;DR: In this article, the authors improved the thermal dissipation of GaN/Si high-electron-mobility transistors by depositing copper (Cu) below aluminum nitride (AlN) filled etched back GaN-on-Si HEMTs.
Journal ArticleDOI
Environmentally Assisted Cracking in Silicon Nitride Barrier Films on Poly(ethylene terephthalate) Substrates
TL;DR: The results reveal the occurrence of environmentally assisted crack growth at strains well below the critical onset crack strain and in the absence of polymer-relaxation-assisted, time-dependent crack growth, suggesting an easier initiation of channel cracks in the presence of water vapor.