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Samuel Graham

Researcher at Georgia Institute of Technology

Publications -  361
Citations -  12423

Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thin film. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.

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Solution-based electrical doping of semiconducting polymer films over a limited depth

TL;DR: PMA doping over a limited depth of bulk heterojunction polymeric films, in which amine-containing polymers were mixed in the solution used for film formation, enables single-layer organic photovoltaic devices, processed at room temperature, with power conversion efficiencies up to 5.9 ± 0.2% and stable performance on shelf-lifetime studies at 60 °C for at least 280 h.
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Elastomer-Polymer Semiconductor Blends for High-Performance Stretchable Charge Transport Networks

TL;DR: In this article, an inverse relationship between mechanical ductility and mobility/molecular ordering in conjugated polymer systems was determined definitively through systematic interrogation of poly(3-hexylthiophene) (P3HT) films with varied degrees of molecular ordering and associated charge transport performance.
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A metallization and bonding approach for high performance carbon nanotube thermal interface materials

TL;DR: These metallized and bonded VACNT films demonstrate properties which are promising for next-generation thermal interface material applications.
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Highly Uniform Trilayer Molybdenum Disulfide for Wafer-Scale Device Fabrication

TL;DR: In this paper, a temperature-dependent synthesis study of large-area MoS2 by direct sulfurization of evaporated Mo thin films on SiO2 is presented, where a variety of physical characterization techniques are employed to investigate the structural quality of the material.

Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon

TL;DR: In this article, the effect of interdiffusion or mixing around the interface, which is generally ignored, must be taken into account when the characteristic lengths of the devices are on the order of the thickness of this mixing region.