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Samuel Graham

Bio: Samuel Graham is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: Thermal conductivity & Thermal resistance. The author has an hindex of 48, co-authored 347 publications receiving 9774 citations. Previous affiliations of Samuel Graham include Merck & Co. & United States Military Academy.


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TL;DR: In this paper, a high-fidelity multiphysics modeling approach employing one-way electrothermal coupling is validated against experimental results from Raman thermometry of a 60-finger gallium nitride (GaN) HEMT power amplifier under a set of direct current (DC)-bias conditions.
Abstract: The increasing demand for tightly integrated gallium nitride high electron mobility transistors (HEMT) into electronics systems requires accurate thermal evaluation. While these devices exhibit favorable electrical characteristics, the performance and reliability suffer from elevated operating temperatures. Localized device self-heating, with peak channel and die level heat fluxes of the order of 1 MW cm−2 and 1 kW cm−2, respectively, presents a need for thermal management that is reliant on accurate channel temperature predictions. In this publication, a high-fidelity multiphysics modeling approach employing one-way electrothermal coupling is validated against experimental results from Raman thermometry of a 60-finger gallium nitride (GaN) HEMT power amplifier under a set of direct current (DC)-bias conditions. A survey of commonly assumed reduced-order approximations, in the form of numerical and analytical models, are systematically evaluated with comparisons to the peak channel temperature rise of the coupled multiphysics model. Recommendations of modeling assumptions are made relating to heat generation, material properties, and composite layer discretization for numerical and analytical models. The importance of electrothermal coupling is emphasized given the structural and bias condition effect on the heat generation profile. Discretization of the composite layers, with temperature-dependent thermal properties that are physically representative, are also recommended.

14 citations

Journal ArticleDOI
TL;DR: In this paper, the authors investigated the direct integration of single-phase jet impingement cooling at the power electronic substrate level for improved thermal management and found that a reduction of up to 25% in the total package thermal resistance compared to a conventional device package was achieved.
Abstract: The ability of packaging solutions to meet the high heat flux dissipation of power electronics relies heavily on effective thermal management strategies. During operation, power electronic devices generate high temperatures that can cause device degradation. To remove this heat from the devices, heat spreaders and cold plates are often used. However, the multiple layers that compose the module often lead to high thermal resistances that hinder heat dissipation and can give rise to interfacial failures. To address these challenges, this paper has investigated the direct integration of single-phase jet impingement cooling at the power electronic substrate level for improved thermal management. This method was evaluated using computational models, experiments, and analytical models. An optimization analysis was performed to determine the influence of various design parameters on the cooling system. Through the directly integrated cooling concept, a reduction of up to 25% in the total package thermal resistance compared to a conventional device package was achieved. In addition, the overall device temperature was reduced, and the thermal resistance was found to be between 0.21 °C/W and 0.47 °C/W for a heat dissipation of 100 W/cm2.

14 citations

Posted Content
TL;DR: In this article, a lattice mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether, which allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface.
Abstract: GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device performance and reliability. Increasing the TBC between GaN and SiC will aid in the heat dissipation of GaN-on-SiC power devices, taking advantage of the high thermal conductivity of the SiC substrate. However, a good understanding of the TBC of this technically important interface is still lacking due to the complicated nature of interfacial heat transport. In this work, a lattice-mismatch-insensitive surface activated bonding method is used to bond GaN directly to SiC and thus eliminating the AlN layer altogether. This allows for the direct integration of high quality GaN layers with SiC to create a high thermal boundary conductance interface. TDTR is used to measure the thermal properties of the GaN thermal conductivity and GaN-SiC TBC. The measured GaN thermal conductivity is larger than that of GaN grown by MBE on SiC, showing the impact of reducing the dislocations in the GaN near the interface. High GaN-SiC TBC is observed for the bonded GaN-SiC interfaces, especially for the annealed interface whose TBC (230 MW/m2-K) is close to the highest values ever reported. To understand the structure-thermal property relation, STEM and EELS are used to characterize the interface structure. The results show that, for the as-bonded sample, there exists an amorphous layer near the interface for the as bonded samples. This amorphous layer is crystallized upon annealing, leading to the high TBC found in our work. Our work paves the way for thermal transport across bonded interfaces, which will impact real-world applications of semiconductor integration and packaging.

14 citations


Cited by
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08 Dec 2001-BMJ
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

01 May 1993
TL;DR: Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems.
Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

29,323 citations

Journal ArticleDOI
01 Aug 2014-Science
TL;DR: Perovskite films received a boost in photovoltaic efficiency through controlled formation of charge-generating films and improved current transfer to the electrodes and low-temperature processing steps allowed the use of materials that draw current out of the perovskites layer more efficiently.
Abstract: Advancing perovskite solar cell technologies toward their theoretical power conversion efficiency (PCE) requires delicate control over the carrier dynamics throughout the entire device. By controlling the formation of the perovskite layer and careful choices of other materials, we suppressed carrier recombination in the absorber, facilitated carrier injection into the carrier transport layers, and maintained good carrier extraction at the electrodes. When measured via reverse bias scan, cell PCE is typically boosted to 16.6% on average, with the highest efficiency of ~19.3% in a planar geometry without antireflective coating. The fabrication of our perovskite solar cells was conducted in air and from solution at low temperatures, which should simplify manufacturing of large-area perovskite devices that are inexpensive and perform at high levels.

5,789 citations

Journal ArticleDOI
TL;DR: A novel non-fullerene electron acceptor (ITIC) that overcomes some of the shortcomings of fullerene acceptors, for example, weak absorption in the visible spectral region and limited energy-level variability, is designed and synthesized.
Abstract: A novel non-fullerene electron acceptor (ITIC) that overcomes some of the shortcomings of fullerene acceptors, for example, weak absorption in the visible spectral region and limited energy-level variability, is designed and synthesized. Fullerene-free polymer solar cells (PSCs) based on the ITIC acceptor are demonstrated to exhibit power conversion effi ciencies of up to 6.8%, a record for fullerene-free PSCs.

3,048 citations