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Sanjit Kumar Swain

Bio: Sanjit Kumar Swain is an academic researcher from Silicon Institute of Technology. The author has contributed to research in topics: MOSFET & Transconductance. The author has an hindex of 8, co-authored 46 publications receiving 183 citations. Previous affiliations of Sanjit Kumar Swain include Sambalpur University & Indian Institute of Technology Dhanbad.

Papers
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Journal ArticleDOI
TL;DR: The results validate that variations in t oxh of the device significantly alters device performance parameters and must be pre accounted for realizing reliable analog/RF system on chip circuits.

34 citations

Journal ArticleDOI
TL;DR: In this paper, the authors proposed and performed extensive simulation study of the novel device structure having a p-GaN back barrier layer inserted in the conventional AlInN/AlN/GaN Gate-Recessed Enhancement-Mode HEMT device for reducing the short channel effects, gate leakage and enhancing the frequency performance.

33 citations

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TL;DR: Sarma et al. as discussed by the authors examined the carbon and oxygen isotope compositions of auriferous quartz-carbonate veins of gold deposits from Sangli, Kabuliyatkatti, Nagavi, Nabapur and Mysore mining areas developed on the Central Lode system of the Gadag Gold Field (GGF) in the Neoarchaean Gadag schist belt of the Dharwar Craton, southern India.

27 citations

Journal ArticleDOI
TL;DR: In this article, a source field-plated AlGaN/GaN in the metal oxide Semiconductor high electron mobility transistors (MOS-HEMT) structure having a relatively short gate length and short gate-to-drain distances is analyzed.
Abstract: In the present paper, we propose a novel device structure by introducing a source field-plated AlGaN/GaN in the metal oxide Semiconductor high electron mobility transistors (MOS-HEMT) structure having a relatively short gate length and short gate-to-drain distances. The 2D breakdown analysis is performed using Sentaurus TCAD simulator. The effects of gate to drain distance ( L g d ), source field plate length ( L f p ) and passivation layer thickness ( t p ) on breakdown voltage (BV) is analyzed. The simulations are done using the drift–diffusion (DD) model, which is calibrated/validated with the previously published experimental results. The breakdown voltage is observed to increase with increase in L f p and t p . Very high breakdown voltage of 752.8 V is obtained by optimizing the L f p to 3 µm and t p to 200 nm at a fixed gate to drain distance of 3.4 µm. The results show a great potential application of the ultra-thin HfAlO source field plated AlGaN/GaN MOS-HEMT to deliver high currents and power densities in high power microwave technologies.

17 citations

Journal ArticleDOI
TL;DR: In this article, the effect of InGaN back barrier on device performances of 100nm gate length AlInN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) device and a wide comparison is made with respect to without considering the back barrier layer.

17 citations


Cited by
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Journal ArticleDOI
TL;DR: The proposed metaheuristic dragonfly-based clustering algorithm CAVDO is used for cluster-based packet route optimization to make stable topology, and mobility aware dynamic transmission range algorithm (MA-DTR) is used withCAVDO for transmission range adaptation on the basis of traffic density.
Abstract: Internet of vehicles (IoV) is a branch of the internet of things (IoT) which is used for communication among vehicles. As vehicular nodes are considered always in motion, hence it causes the frequent changes in the topology. These changes cause major issues in IoV like scalability, dynamic topology changes, and shortest path for routing. Clustering is among one of the solutions for such type of issues. In this paper, the stability of IoV topology in a dynamic environment is focused. The proposed metaheuristic dragonfly-based clustering algorithm CAVDO is used for cluster-based packet route optimization to make stable topology, and mobility aware dynamic transmission range algorithm (MA-DTR) is used with CAVDO for transmission range adaptation on the basis of traffic density. The proposed CAVDO with MA-DTR is compared with the progressive baseline techniques ant colony optimization (ACO) and comprehensive learning particle swarm optimization (CLPSO). Numerous experiments were performed keeping in view the transmission dynamics for stable topology. CAVDO performed better in many cases providing minimum number of clusters according to current channel condition. Considerable important parameters involved in clustering process are: number of un-clustered nodes as a re-clustering criterion, clustering time, re-clustering delay, dynamic transmission range, direction, and speed. According to these parameters, results indicate that CAVDO outperformed ACO-based clustering and CLPSO in various network settings. Additionally, to improve the network availability and to incorporate the functionalities of next-generation network infrastructure, 5G-enabled architecture is also utilized.

82 citations

Journal ArticleDOI
TL;DR: The Cuonadong mine in the Himalayan region of China has been reported to have an average TDM2 value of 1.56 −10.5 (-10.7 on average) as discussed by the authors, which reveals that the leucogranites are derived from partial melting of ancient metasedimentary rocks.

59 citations

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TL;DR: The proposed DHC algorithm is a mobility-based clustering algorithm that exploits the most relevant mobility metrics such as vehicle speed, position, and direction, in addition to other metrics related to the communication link quality such as the link expiration time (LET) and the signal-to-noise ratio (SNR).
Abstract: Scalability and the highly dynamic topology of Vehicular Ad Hoc Networks (VANETs) are the biggest challenges that slow the roll-out of such a promising technology. Adopting an effective VANET clustering algorithm can tackle these issues in addition to benefiting routing, security and media access management. In this paper, we propose a general-purpose resilient double-head clustering (DHC) algorithm for VANET. Our proposed approach is a mobility-based clustering algorithm that exploits the most relevant mobility metrics such as vehicle speed, position, and direction, in addition to other metrics related to the communication link quality such as the link expiration time (LET) and the signal-to-noise ratio (SNR). The proposed algorithm has enhanced performance and stability features, especially during the cluster maintenance phase, through a set of procedures developed to achieve these objectives. An extensive evaluation methodology is followed to validate DHC and compare its performance with another algorithm using different existing and newly proposed evaluation metrics. These metrics are analyzed under various mobility scenarios, vehicle densities, and radio channel models such as log-normal shadowing and two-ray ground loss with and without Nakagami-m fading model. The proposed algorithm DHC has proven its ability to be more stable and efficient under different simulation scenarios.

51 citations

Journal ArticleDOI
TL;DR: In this article, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor are analyzed using discrete field plate technique, which reduces the device parasitic capacitance exhibiting very low CGS and CGD.
Abstract: In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic capacitance exhibiting very low CGS and CGD of 5.8 × 10−13 F/mm and 4.2 × 10−13 F/mm respectively to improve the cut off frequency (fT) from 17.5 GHz to 20 GHz. The discrete field plate suppresses the maximum electric field between gate and drain region to achieve the high breakdown voltage of 330 V. The maximum transconductance (gm) achieved is 275 mS/mm, ensuring the better DC operation of the device. The simulated results clearly show that, the discrete field plate HEMTs are superior in performance over conventional GaN FP-HEMTs for future high frequency and high power applications.

47 citations

Journal ArticleDOI
TL;DR: Xiaolonghe is a poorly studied greisen-type tin deposit that is hosted by biotite granite in the western Yunnan tin belt as discussed by the authors, which is characterised by high Si, Al and K and low Mg, Fe and Ca, with an average A/CNK of 1.02.

44 citations