S
Saptarshi Das
Researcher at Pennsylvania State University
Publications - 154
Citations - 10942
Saptarshi Das is an academic researcher from Pennsylvania State University. The author has contributed to research in topics: Computer science & Field-effect transistor. The author has an hindex of 29, co-authored 107 publications receiving 8107 citations. Previous affiliations of Saptarshi Das include Foundation University, Islamabad & Purdue University.
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High Performance Multilayer MoS2 Transistors with Scandium Contacts
TL;DR: It is demonstrated that through a proper understanding and design of source/drain contacts and the right choice of number of MoS(2) layers the excellent intrinsic properties of this 2-D material can be harvested.
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Recent Advances in Two-Dimensional Materials beyond Graphene
Ganesh R. Bhimanapati,Zhong Lin,Vincent Meunier,Vincent Meunier,Yeonwoong Jung,Jangho J Cha,Saptarshi Das,Di Xiao,Young-Woo Son,Michael S. Strano,Valentino R. Cooper,Liangbo Liang,Liangbo Liang,Steven G. Louie,Steven G. Louie,Emilie Ringe,Wenchao Zhou,Steve S. Kim,Rajesh R. Naik,Bobby G. Sumpter,Humberto Terrones,Humberto Terrones,Fengnian Xia,Yeliang Wang,Jian Zhu,Deji Akinwande,Nasim Alem,Jon A. Schuller,Raymond E. Schaak,Mauricio Terrones,Joshua A. Robinson +30 more
TL;DR: Insight is provided into the theoretical modeling and understanding of the van der Waals forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies.
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Tunable Transport Gap in Phosphorene
TL;DR: It is experimentally demonstrate that the transport gap of phosphorene can be tuned monotonically from ∼0.3 to ∼1.0 eV when the flake thickness is scaled down from bulk to a single layer, and the asymmetry of the electron and the hole current was found to be dependent on the layer thickness.
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Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
TL;DR: In this paper, the authors provide a holistic overview of the different synthesis and characterization techniques, electronic and photonic device characteristics, and catalytic properties of transition metal dichalcogenides and their heterostructures, and comment on the challenges that need to be overcome for full-scale commercial implementation of this novel class of layered materials.
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Contact engineering for 2D materials and devices
TL;DR: The phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts are elucidated.