Sarah Uvin

TL;DR: In this paper, the authors review the work on heterogeneous III-V-on-silicon photonic components and circuits for applications in optical communication and sensing and elaborate on the integration strategy and describe a broad range of devices realized on this platform.

TL;DR: In this paper, a silicon-based photonic integrated circuit technology for applications beyond the telecommunication wavelength range is discussed, where the strong nonlinearity of silicon combined with the low nonlinear absorption in the mid-infrared is exploited to generate picosecond pulse based supercontinuum sources, optical parametric oscillators and wavelength translators connecting the tele communication wavelength range and the midinfrared.

TL;DR: In this article, the use of silicon-based photonic integrated circuits for spectroscopic sensing applications is discussed, and a variety of optical functions in the mid-infrared besides passive waveguiding and filtering can be realized, either relying on nonlinear optics or on the integration of other materials such as GaSb-based compound semiconductors, GeSn epitaxy and PbS colloidal nanoparticles.

TL;DR: A novel design of this junction is proposed where the level of adiabaticity is carefully tailored to capture the radiation loss in higher-order modes, while at the same time providing additional mode mixing that increases the richness of the reservoir dynamics.

TL;DR: Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries and stabilization of the repetition rate of these devices using hybrid mode-locking are demonstrated.