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Sarith P. Sathian

Researcher at Indian Institute of Technology Madras

Publications -  66
Citations -  818

Sarith P. Sathian is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Graphene & Interfacial thermal resistance. The author has an hindex of 14, co-authored 56 publications receiving 624 citations. Previous affiliations of Sarith P. Sathian include National Institute of Technology Calicut.

Papers
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The role of activation energy and reduced viscosity on the enhancement of water flow through carbon nanotubes

TL;DR: It is concluded that the reason behind the observed enhancement in the rate of fluid flow through carbon nanotubes could be the nonlinear variation of viscosity.
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Water flow in carbon nanotubes: The effect of tube flexibility and thermostat.

TL;DR: The strong influence of the thermostatting method on the water transport in carbon nanotubes (CNTs) is shown by considering simulations in which the system temperature is controlled via the walls or via the fluid.
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Water flow in carbon nanotubes: the role of tube chirality.

TL;DR: The tubes with an armchair (n = m) structure show the maximum streaming velocity, flux, flow rate enhancement and slip length, whereas the corresponding values are lower for chiral (n≠m) tubes, and are the lowest in zigzag CNTs.
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Effect of Hydrogen Bonds on the Dielectric Properties of Interfacial Water.

TL;DR: This work investigates the effect of the orientation of hydrogen bonds on the dielectric properties of confined water using molecular dynamics simulations and finds a reduced rotational diffusion coefficient for water molecules close to the solid surface.
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Molecular-dynamics study of Poiseuille flow in a nanochannel and calculation of energy and momentum accommodation coefficients.

TL;DR: A molecular-dynamics study of flow of Lennard-Jones fluid through a nanochannel where size effects predominate, demonstrating the applicability of the Navier-Stokes equation with the second-order slip model in the early transition regime.