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Author

Sathyasree Jeyaraman

Bio: Sathyasree Jeyaraman is an academic researcher from Indian Institute of Technology Madras. The author has contributed to research in topics: Inductor & Band-pass filter. The author has an hindex of 1, co-authored 2 publications receiving 3 citations.

Papers
More filters
Proceedings ArticleDOI
01 Jan 2019
TL;DR: In this paper, a frequency independent equivalent circuit model is proposed for series stacked inductors having variable width and space (taper) across their turns, which accounts for the increase in mutual inductance between the stacked spirals due to taper.
Abstract: In this paper for the first time, a frequency independent equivalent circuit model is proposed for series stacked inductors having variable width and space (taper) across their turns. The proposed model accounts for the increase in mutual inductance between the stacked spirals due to taper. Also, the proximity effect losses with tapered top and bottom spirals of the series stack is accurately modeled. Finally, the inter-layer capacitance between the stacked spirals which dictates the self-resonant-frequency of the series inductor is calculated across different values of taper. EM simulations and measurements show excellent correlation with model simulations across different layouts with different values of taper thereby demonstrating the scalability of the proposed model.

4 citations

Journal ArticleDOI
TL;DR: In this paper, the linear voltage profile along the turns of the conical inductor is taken into account for capacitance calculation which is critical in accurately predicting ${Q}$ -values.
Abstract: Conical inductors and metal-oxide-metal (MOM) capacitors are shown to have higher quality factor ( ${Q}$ ) characteristics at millimeter wave (mm-wave) frequencies over conventional inductors and nitride MIM capacitors. In this work, Physics-based analytical models are developed for conical inductors and MOM capacitors usable at mm-wave frequencies. The linear voltage profile along the turns of the conical inductor is taken into account for capacitance calculation which is critical in accurately predicting ${Q}$ -values. Two RL networks coupled by capacitors are proposed to capture the frequency-dependent characteristics of the MOM capacitor. The lumped elements in both these device models are frequency independent and can be calculated using layout and process parameters. The proposed models for conical inductors and MOM capacitors are verified with electromagnetic (EM) simulations till 100 GHz. A prototype 60-GHz bandpass filter (BPF) is fabricated using $0.18~\mu \text{m}$ RF-silicon on insulator (SOI) technology to validate the accuracy of the developed compact models. BPF simulation results using the proposed models are shown to be in excellent agreement with those produced with EM simulations and silicon measurements.

2 citations


Cited by
More filters
Journal ArticleDOI
TL;DR: In this paper, the linear voltage profile along the turns of the conical inductor is taken into account for capacitance calculation which is critical in accurately predicting ${Q}$ -values.
Abstract: Conical inductors and metal-oxide-metal (MOM) capacitors are shown to have higher quality factor ( ${Q}$ ) characteristics at millimeter wave (mm-wave) frequencies over conventional inductors and nitride MIM capacitors. In this work, Physics-based analytical models are developed for conical inductors and MOM capacitors usable at mm-wave frequencies. The linear voltage profile along the turns of the conical inductor is taken into account for capacitance calculation which is critical in accurately predicting ${Q}$ -values. Two RL networks coupled by capacitors are proposed to capture the frequency-dependent characteristics of the MOM capacitor. The lumped elements in both these device models are frequency independent and can be calculated using layout and process parameters. The proposed models for conical inductors and MOM capacitors are verified with electromagnetic (EM) simulations till 100 GHz. A prototype 60-GHz bandpass filter (BPF) is fabricated using $0.18~\mu \text{m}$ RF-silicon on insulator (SOI) technology to validate the accuracy of the developed compact models. BPF simulation results using the proposed models are shown to be in excellent agreement with those produced with EM simulations and silicon measurements.

2 citations

Journal ArticleDOI
TL;DR: In this article , a semi-analytical model for calculating the mutual inductance between a thin conical sheet inductor and a filamentary circular loop, which are coaxial in air, is presented.
Abstract: The paper describes a new formula for calculating the mutual inductance between a thin conical sheet inductor and a filamentary circular loop, which are coaxial in air. The presented formula is derived semi-analytically using the complete elliptic integrals of the first, second, and third kind, along with the integral term which will be solved numerically. The results are validated using double and single integration methods, as well as the semi-analytical formula. The mutual inductance between a thin cylindrical solenoid and a filamentary circular loop can be obtained using the new formula for the conical coil and circular loop. Presented formulas can be useful in various applications, such as the excitation coil used in electromagnetic-levitation melting, the production of magnetic field homogeneity and broadband RF and wireless power transfer systems that utilize conical inductors. Overall, the paper presents a valuable contribution to the field of inductor design and can be useful in various applications involving conical inductors.
Journal ArticleDOI
TL;DR: In this article , a conductor model that can be used to design various inductor layout configurations for any Si and SiGe technological processes is considered, and the experimental prototypes of the test inductors were produced in the standard SiGe BiCMOS 130 nm process to verify the model.
Abstract: In this paper, the conductor model that can be used to design of various inductor layout configurations for any Si and SiGe technological processes is considered. The experimental prototypes of the test inductors were produced in the standard SiGe BiCMOS 130 nm process to verify the model. The chips measuring results showed that the characteristics of the prototypes taking into account the manufacturing tolerance are in the range of model simulated values. It has been found that the proposed model has a better convergence with the prototypes characteristics than 3D modeling. The equivalent circuit simulation speed can be orders of magnitude higher than the 3D simulation speed. The proposed model accuracy is achieved by taking into account the skin-effect and edge-effects in the dielectric and substrate. Using the skin-effect equivalent circuit the model can be run in Cadence Specter Simulator. It is necessary for the microwave LC-filters development.
DOI
15 Nov 2022
TL;DR: In this paper , the developed model of 18 GHz high-pass filter (HPF) includes models of inductors, MIM capacitors, and conductors allowing for skin effect, edge effects, substrate influence, and the influence of the substrate contacts layout.
Abstract: The paper describes the developed model of 18 GHz high-pass filter (HPF). The filter model includes models of inductors, MIM capacitors, and conductors allows for skin-effect, edge effects, substrate influence, and the influence of the substrate contacts layout. The developed model has been verified by experimental prototype of the filter, which is made in the standard process of 130 nm silicon-germanium (SiGe) BiCMOS. It has been found that the developed model has much smaller characteristics deviation from the experimental prototype than the filter layout extraction. The recommendations of the microwave LC-filters ground conductor layout design are expressed based on developed model.
Journal ArticleDOI
TL;DR: A calibration methodology for the optimized minimum inductor (OMI) bandpass filter (BPF) to compensate passive components' inherent loss, such as resistances and reactances, is presented.