The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

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A comprehensive review of zno materials and devices

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

The surface and materials science of tin oxide

RHESSI is the sixth in the NASA line of Small Explorer (SMEX) missions and the first managed in the Principal Investigator mode, where the PI is responsible for all aspects of the mission except the launch vehicle. RHESSI is designed to investigate particle acceleration and energy release in solar flares, through imaging and spectroscopy of hard X-ray/gamma-ray continua emitted by energetic electrons, and of gamma-ray lines produced by energetic ions. The single instrument consists of an imager, made up of nine bi-grid rotating modulation collimators (RMCs), in front of a spectrometer with nine cryogenically-cooled germanium detectors (GeDs), one behind each RMC. It provides the first high-resolution hard X-ray imaging spectroscopy, the first high-resolution gamma-ray line spectroscopy, and the first imaging above 100 keV including the first imaging of gamma-ray lines. The spatial resolution is as fine as ~ 2.3 arc sec with a full-Sun (≳ 1°) field of view, and the spectral resolution is ~ 1–10 keV FWHM over the energy range from soft X-rays (3 keV) to gamma-rays (17 MeV). An automated shutter system allows a wide dynamic range (> 107) of flare intensities to be handled without instrument saturation. Data for every photon is stored in a solid-state memory and telemetered to the ground, thus allowing for versatile data analysis keyed to specific science objectives. The spin-stabilized (~ 15 rpm) spacecraft is Sun-pointing to within ~ 0.2° and operates autonomously. RHESSI was launched on 5 February 2002, into a nearly circular, 38° inclination, 600-km altitude orbit and began observations a week later. The mission is operated from Berkeley using a dedicated 11-m antenna for telemetry reception and command uplinks. All data and analysis software are made freely and immediately available to the scientific community.

The Reuven Ramaty High-Energy Solar Spectroscopic Imager (Rhessi)

The Hinode satellite (formerly Solar-B) of the Japan Aerospace Exploration Agency’s Institute of Space and Astronautical Science (ISAS/JAXA) was successfully launched in September 2006. As the successor to the Yohkoh mission, it aims to understand how magnetic energy gets transferred from the photosphere to the upper atmosphere and results in explosive energy releases. Hinode is an observatory style mission, with all the instruments being designed and built to work together to address the science aims. There are three instruments onboard: the Solar Optical Telescope (SOT), the EUV Imaging Spectrometer (EIS), and the X-Ray Telescope (XRT). This paper provides an overview of the mission, detailing the satellite, the scientific payload, and operations. It will conclude with discussions on how the international science community can participate in the analysis of the mission data.

The Hinode(Solar-B)Mission: An Overview

Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO–TFT) have been constructed. The ZnO layers were deposited using pulsed laser deposition at 450 °C at an oxygen pressure of 3 m Torr, and the material that was formed had a background carrier concentration of less than 5×1016 cm−3. A double layer gate insulator consisting of SiO2 and SiNx was effective in suppressing leakage current and enabling the ZnO–TFT to operate successfully. The Ion/Ioff ratio of ZnO–TFTs fabricated on Si wafers was more than 105 and the optical transmittance of ZnO–TFTs fabricated on glass was more than 80%. These results show that it is possible to fabricate a transparent TFT that can even be operated in the presence of visible light.

Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

(57) Abstract: Provided is a thin film transistor including a ZnO film as a semiconductor active layer, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics. A thin film transistor T1 formed on an insulating substrate 1. On the substrate 1, a gate electrode 2, a gate insulating film 31, an intermediate layer 32, and a semiconductor active layer 4 made of ZnO are sequentially formed. On the semiconductor active layer 4, a source electrode 5 and a drain electrode 6 are formed. ing. The mid layer 32 It is provided to prevent mobile ions (Zn ions) from entering the gate insulating film 32 from the semiconductor active layer (ZnO film) 4 and is made of silicon nitride.

Thin-film transistor

SOLAR flares are thought to be the result of magnetic reconnection — the merging of antiparallel magnetic fields and the consequent release of magnetic energy. Flares are classified into two types1: compact and two-ribbon. The two-ribbon flares, which appear as slowly-developing, long-lived large loops, are understood theoretically2–6 as arising from an eruption of a solar prominence that pulls magnetic field lines upward into the corona. As the field lines form an inverted Y-shaped structure and relax, the reconnection of the field lines takes place. This view has been supported by recent observations7–10. A different mechanism seemed to be required, however, to produce the short-lived, impulsive compact flares. Here we report observations made with the Yohkoh11 Hard X-ray Telescope12 and Soft X-ray Telescope13, which show a compact flare with a geometry similar to that of a two-ribbon flare. We identify the reconnection region as the site of particle acceleration, suggesting that the basic physics of the reconnection process (which remains uncertain) may be common to both types of flare.

A loop-top hard X-ray source in a compact solar flare as evidence for magnetic reconnection

Masuda et al. found a hard X-ray source well above a soft X-ray loop in impulsive compact-loop flares near the limb. This indicates that main energy release is going on above the soft X-ray loop, and suggests magnetic reconnection occurring above the loop, similar to the classical model for two ribbon flares. If the reconnection hypothesis is correct, a hot plasma (or plasmoid) ejection is expected to be associated with these flares. Using the images taken by the soft X-ray telescope aboard Yohkoh, we searched for such plasma ejections in eight impulsive compact-loop flares near the limb, which are selected in an unbiased manner and include also the Masuda flare, 1992 January 13 flare. We found that all these flares were associated with X-ray plasma ejections high above the soft X-ray loop and the velocity of ejections is within the range of 50-400 km s-1. This result gives further support for magnetic reconnection hypothesis of these impulsive compact-loop flares.

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Hot-Plasma Ejections Associated with Compact-Loop Solar Flares

The Hard X-ray Telescope (HXT) is a Fourier-synthesis imager; a set of spatially-modulated photon count data are taken from 64 independent subcollimators and are Fourier-transformed into an image by using procedures such as the maximum entropy method (MEM) or CLEAN. The HXT takes images of solar flares simultaneously in four energy bands, nominally 15 (or 19)–24, 24–35, 35–57, and 57–100 keV, with an ultimate angular resolution as fine as ∼ 5 arc sec and a time resolution 0.5 s. Each subcollimator has a field of view wider than the solar disk. The total effective area of the collimator/detector system reaches ∼ 70 cm2, about one order of magnitude larger than that of the HINOTORI hard X-ray imager. Thanks to these improvements, HXT will for the first time enable us to take images of flares at photon energies above ∼ 30 keV. These higher-energy images will be compared with lower-energy ones, giving clues to the understanding of nonthermal processes in solar flares, i.e., the acceleration and confinement of energetic electrons. It is of particular importance to specify the acceleration site with regard to the magnetic field figuration in a flaring region, which will be achieved by collaborative observations between HXT and the Soft X-ray Telescope on board the same mission.

Satoshi Masuda

Papers

Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

Thin-film transistor

A loop-top hard X-ray source in a compact solar flare as evidence for magnetic reconnection

Hot-Plasma Ejections Associated with Compact-Loop Solar Flares

The Hard X-ray Telescope (HXT) for the SOLAR-A Mission