Satoshi Yamakawa

TL;DR: In this article, a trench gate SiC-MOSFET with a p-type region, named Bottom P-Well (BPW), formed at the bottom of the trench gate for bottom oxide protection was developed.

TL;DR: In this article, an SBD is embedded into each unit cell of a 6.5 kV SiC-MOSFET to suppress current conduction of the body diodes, which causes bipolar degradation following the expansion of stacking faults.

TL;DR: In this paper, the authors evaluate the stacking faults (SFs) expansion from basal plane dislocations (BPDs) converted into threading edge dislocation (TEDs) under the current stress to the pn devices and analyze the nucleation site of the SF by combined polishing, chemical etching in molten KOH, photoluminescence imaging, focus ion beam, transmission electron microscopy, and Time-of-Flight secondary ion mass spectrometer techniques.

TL;DR: In this paper, an external Schottky barrier diodes (SBD) is used to suppress the conduction of the body diode of an MOSFET, which can reduce the total chip size of high voltage modules.

TL;DR: In this article, the authors have successfully developed 4H-SiC devices including metaloxide-semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) with a rated voltage of 3.3 kV.