Sen Zhang

TL;DR: This paper investigates the resistive switching characteristics in a Cu/HfO(2):Cu/Pt sandwiched structure for multilevel non-volatile memory applications and finds different resistance values are achieved using different compliance currents in the program process.

TL;DR: In this paper, the resistive switching properties of a ZrO2-based memory film with implanted Ti ions are investigated, and the results demonstrate that doping Ti in Zr O2 can remove the electroforming process and reduce the variations of switching parameters such as set voltage and resistance in off state.

TL;DR: In this article, the self-rectifying resistive switching characteristics are obtained when the resistive memory is switched to low-resistance state (LRS), and it is found that the Schottky contact at the Au/ZrO2 interface limits charge injection under reverse bias, while under forward bias the current is limited by space charge.

TL;DR: In this paper, the resistive switching characteristics of MnOx thin film were investigated for resistive random access memory (ReRAM) applications, and the experiment result suggested that Pt/MnOx/Al device had a potentiality for practical memory application.

TL;DR: In this paper, the resistive random access memory (RRAM) with metal-insulator-metal structure was investigated for the first time under radiation conditions, and the fabricated Cu-doped HfO2-based RRAM devices were found to have immunity from 60Co γ ray of various dose ranges.