S
Seok Lee
Researcher at Korea Institute of Science and Technology
Publications - 250
Citations - 2964
Seok Lee is an academic researcher from Korea Institute of Science and Technology. The author has contributed to research in topics: Optical amplifier & Optical switch. The author has an hindex of 27, co-authored 245 publications receiving 2580 citations.
Papers
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Journal ArticleDOI
Validation of recently proposed consensus criteria for thrombotic microangiopathy after allogeneic hematopoietic stem-cell transplantation.
Byung-Sik Cho,Seung-Ah Yahng,Sung-Eun Lee,Ki-Seong Eom,Yoo-Jin Kim,Hee-Je Kim,Seok Lee,Chang-Ki Min,Seok-Goo Cho,Dong-Wook Kim,Jong Wook Lee,Woo-Sung Min,Chong-Won Park +12 more
TL;DR: In patients with O-TMA, the degree of schistocytosis failed to show prognostic significance, whereas renal involvement was a significant prognostic factor associated with poor survival, according to multivariate analyses.
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All-optical XOR gate using semiconductor optical amplifiers without additional input beam
TL;DR: In this paper, a cross-gain modulation of semiconductor optical amplifiers has been proposed and demonstrated successfully at 10 Gb/s for all-optical XOR gates.
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Chemiresistive Electronic Nose toward Detection of Biomarkers in Exhaled Breath
Hi Gyu Moon,Youngmo Jung,Soo Deok Han,Soo Deok Han,Young Seok Shim,Beomju Shin,Taikjin Lee,Jin Sang Kim,Seok Lee,Seong Chan Jun,Hyung Ho Park,Chulki Kim,Chong Yun Kang,Chong Yun Kang +13 more
TL;DR: The excellent sensing performance indicates that the CEN can detect the biomarkers of H2S, NH3, and NO in exhaled breath and even distinguish them clearly in the principal component analysis (PCA).
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All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers
TL;DR: In this paper, an all-optical NAND gate at 10 Gbit/s was demonstrated using gain nonlinearity characteristics of a semiconductor optical amplifier, which operates in a single cross-gain modulation mechanism.
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Anomalous Raman scattering and lattice dynamics in mono- and few-layer WTe2
TL;DR: Comprehensive characterization of Raman spectra of WTe2 from bulk to monolayer using experimental and computational methods is reported and it is found that mono and bi-layer W Te2 are easily identified by Raman Spectroscopy since two or one Raman modes that are observed in higher-layerWTe2 are greatly suppressed below the noise level in the mono- andBi- layer WTe1.