Seong Jun Kang

Bio: Seong Jun Kang is an academic researcher from Kyung Hee University. The author has contributed to research in topics: Quantum dot & X-ray photoelectron spectroscopy. The author has an hindex of 24, co-authored 112 publications receiving 5298 citations. Previous affiliations of Seong Jun Kang include University of Illinois at Urbana–Champaign & Korea Research Institute of Standards and Science.

High-resolution electrohydrodynamic jet printing

Abstract: Efforts to adapt and extend graphic arts printing techniques for demanding device applications in electronics, biotechnology and microelectromechanical systems have grown rapidly in recent years. Here, we describe the use of electrohydrodynamically induced fluid flows through fine microcapillary nozzles for jet printing of patterns and functional devices with submicrometre resolution. Key aspects of the physics of this approach, which has some features in common with related but comparatively low-resolution techniques for graphic arts, are revealed through direct high-speed imaging of the droplet formation processes. Printing of complex patterns of inks, ranging from insulating and conducting polymers, to solution suspensions of silicon nanoparticles and rods, to single-walled carbon nanotubes, using integrated computer-controlled printer systems illustrates some of the capabilities. High-resolution printed metal interconnects, electrodes and probing pads for representative circuit patterns and functional transistors with critical dimensions as small as 1 μm demonstrate potential applications in printed electronics.

High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

Abstract: †Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as 2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching 1,000 cm 2 V 21 s 21 and 3,000 S m 21 , respectively, and with current outputs of up to 1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.

Heterogeneous Three-Dimensional Electronics by Use of Printed Semiconductor Nanomaterials

Abstract: We developed a simple approach to combine broad classes of dissimilar materials into heterogeneously integrated electronic systems with two- or three-dimensional layouts. The process begins with the synthesis of different semiconductor nanomaterials, such as single-walled carbon nanotubes and single-crystal micro- and nanoscale wires and ribbons of gallium nitride, silicon, and gallium arsenide on separate substrates. Repeated application of an additive, transfer printing process that uses soft stamps with these substrates as donors, followed by device and interconnect formation, yields high-performance heterogeneously integrated electronics that incorporate any combination of semiconductor nanomaterials on rigid or flexible device substrates. This versatile methodology can produce a wide range of unusual electronic systems that would be impossible to achieve with other techniques.

Experimental and Theoretical Studies of Transport through Large Scale, Partially Aligned Arrays of Single-Walled Carbon Nanotubes in Thin Film Type Transistors

Abstract: Gate-modulated transport through partially aligned films of single-walled carbon nanotubes (SWNTs) in thin film type transistor structures are studied experimentally and theoretically. Measurements are reported on SWNTs grown by chemical vapor deposition with systematically varying degrees of alignment and coverage in transistors with a range of channel lengths and orientations perpendicular and parallel to the direction of alignment. A first principles stick-percolation-based transport model provides a simple, yet quantitative framework to interpret the sometimes counterintuitive transport parameters measured in these devices. The results highlight, for example, the dramatic influence of small degrees of SWNT misalignment on transistor performance and imply that coverage and alignment are correlated phenomena and therefore should be simultaneously optimized. The transport characteristics reflect heterogeneity in the underlying anisotropic metal-semiconductor stick-percolating network and cannot be reproduced by classical transport models.

Printed multilayer superstructures of aligned single-walled carbon nanotubes for electronic applications.

Abstract: We developed means to form multilayer superstructures of large collections of single-walled carbon nanotubes (SWNTs) configured in horizontally aligned arrays, random networks, and complex geometries of arrays and networks on a wide range of substrates. The approach involves guided growth of SWNTs on crystalline and amorphous substrates followed by sequential, multiple step transfer of the resulting collections of tubes to target substrates, such as high-k thin dielectrics on silicon wafers, transparent plates of glass, cylindrical tubes and other curved surfaces, and thin, flexible sheets of plastic. Electrical measurements on dense, bilayer superstructures, including crossbars, random networks, and aligned arrays on networks of SWNTs reveal some important characteristics of representative systems. These and other layouts of SWNTs might find applications not only in electronics but also in areas such as optoelectronics, sensors, nanomechanical systems, and microfluidics.

The chemistry of graphene oxide

Abstract: The chemistry of graphene oxide is discussed in this critical review Particular emphasis is directed toward the synthesis of graphene oxide, as well as its structure Graphene oxide as a substrate for a variety of chemical transformations, including its reduction to graphene-like materials, is also discussed This review will be of value to synthetic chemists interested in this emerging field of materials science, as well as those investigating applications of graphene who would find a more thorough treatment of the chemistry of graphene oxide useful in understanding the scope and limitations of current approaches which utilize this material (91 references)

Mussel-Inspired Surface Chemistry for Multifunctional Coatings

Abstract: We report a method to form multifunctional polymer coatings through simple dip-coating of objects in an aqueous solution of dopamine. Inspired by the composition of adhesive proteins in mussels, we used dopamine self-polymerization to form thin, surface-adherent polydopamine films onto a wide range of inorganic and organic materials, including noble metals, oxides, polymers, semiconductors, and ceramics. Secondary reactions can be used to create a variety of ad-layers, including self-assembled monolayers through deposition of long-chain molecular building blocks, metal films by electroless metallization, and bioinert and bioactive surfaces via grafting of macromolecules.

Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material

Abstract: The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics1,2,3,4,5,6. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible7,8,9,10. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.

Transfer of large-area graphene films for high-performance transparent conductive electrodes

Abstract: Graphene, a two-dimensional monolayer of sp2-bonded carbon atoms, has been attracting great interest due to its unique transport properties. One of the promising applications of graphene is as a transparent conductive electrode owing to its high optical transmittance and conductivity. In this paper, we report on an improved transfer process of large-area graphene grown on Cu foils by chemical vapor deposition. The transferred graphene films have high electrical conductivity and high optical transmittance that make them suitable for transparent conductive electrode applications. The improved transfer processes will also be of great value for the fabrication of electronic devices such as field effect transistor and bilayer pseudospin field effect transistor devices.