S
Sergey A. Reshanov
Researcher at University of Erlangen-Nuremberg
Publications - 87
Citations - 3596
Sergey A. Reshanov is an academic researcher from University of Erlangen-Nuremberg. The author has contributed to research in topics: Deep-level transient spectroscopy & Diode. The author has an hindex of 14, co-authored 84 publications receiving 3349 citations.
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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Konstantin V. Emtsev,Aaron Bostwick,Karsten Horn,Johannes Jobst,Gary Lee Kellogg,Lothar Ley,J. L. McChesney,Taisuke Ohta,Sergey A. Reshanov,Jonas Röhrl,Eli Rotenberg,Andreas K. Schmid,Daniel Waldmann,Heiko B. Weber,Thomas Seyller +14 more
TL;DR: The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis and produces monolayer graphene films with much larger domain sizes than previously attainable.
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Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy
Peter Lauffer,Konstantin V. Emtsev,Ralf Graupner,Th. Seyller,Lothar Ley,Sergey A. Reshanov,Heiko B. Weber +6 more
TL;DR: In this paper, the morphology, atomic scale structure, and electronic structure of thin films of few-layer graphene (FLG) on SiC(0001) by scanning tunneling microscopy and spectroscopy (STS) was studied.
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Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
Stefan Hertel,Daniel Waldmann,Johannes Jobst,Andreas Albert,M. Albrecht,Sergey A. Reshanov,Adolf Schöner,Michael Krieger,Heiko B. Weber +8 more
TL;DR: This work presents a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001), which consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface.
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Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Reza Ghandi,Benedetto Buono,Martin Domeij,Romain Esteve,Adolf Schöner,Jisheng Han,Sima Dimitrijev,Sergey A. Reshanov,C.-M. Zetterling,Mikael Östling +9 more
TL;DR: In this article, the performance of bipolar junction transistor (BJT) is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface passivation layers.
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SiC MATERIAL PROPERTIES
Gerhard Pensl,Florin Ciobanu,Thomas Frank,Michael Krieger,Sergey A. Reshanov,Frank Schmid,Michael Weidner +6 more
TL;DR: In this paper, the authors summarized device-relevant material properties of wide bandgap semiconductor silicon carbide polytypes, including 4H-, 6H- and 3C-SiC.