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Sergio M.M. Coelho

Bio: Sergio M.M. Coelho is an academic researcher from University of Pretoria. The author has contributed to research in topics: Deep-level transient spectroscopy & Schottky barrier. The author has an hindex of 11, co-authored 46 publications receiving 499 citations.

Papers
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Journal ArticleDOI
TL;DR: The developed compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, agrees well with the predictions from the detailed charged particle trajectory simulations.
Abstract: We have developed a compact streak camera suitable for measuring the duration of highly charged subrelativistic femtosecond electron bunches with an energy bandwidth in the order of 0.1%, as frequently used in ultrafast electron diffraction (UED) experiments for the investigation of ultrafast structural dynamics. The device operates in accumulation mode with 50 fs shot-to-shot timing jitter, and at a 30 keV electron energy, the full width at half maximum temporal resolution is 150 fs. Measured durations of pulses from our UED gun agree well with the predictions from the detailed charged particle trajectory simulations.

66 citations

Journal ArticleDOI
TL;DR: In this paper, the influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H-SiC samples of doping density 7.1×1015 cm−3 has been investigated over the temperature range 40-300 K.

53 citations

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TL;DR: In this article, the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pd Schottky contacts were investigated by deep level transient spectroscopy.
Abstract: We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pd Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. Our results show that EBD introduces several electron and hole traps at and near the surface of Ge. The main defect introduced during EBD has electronic properties similar to those of the V–Sb complex, or E center, introduced during high-energy particle irradiation of Ge. This defect has two levels E0.38 and H0.30 that correspond to its (−−,−) and (−,0) charge states.

45 citations

Journal ArticleDOI
TL;DR: In this article, the authors demonstrate a new electron pulse compressor design based on a simple and compact RF structure incorporating a pair of gallium arsenide photoconductive semiconductor switches that are triggered by femtosecond laser pulses, thereby providing a longitudinal voltage gradient of up to 20 V/ps.
Abstract: Temporally resolved observation of microscopic structural dynamics of solids with ultrafast electron diffraction (UED) requires extremely short pulsed, highly charged, monoenergetic electron beams with sufficient transverse coherence length of several unit cells of the investigated samples. However, Coulomb repulsion defeats these parameters in free propagation of an electron pulse initially bright on the photo cathode. We demonstrate a new electron pulse compressor design based on a simple and compact RF structure incorporating a pair of gallium arsenide photoconductive semiconductor switches that are triggered by femtosecond laser pulses, thereby providing a longitudinal voltage gradient of up to 20 V/ps. Our proof of principle experiment achieved compression of bunches containing 26,000 electrons to a duration of below 750 fs and a beam diameter of 300 μm in the temporal and spatial focus of the device while maintaining the good beam collimation required for time resolved electron diffraction experiments. The simplicity of the compressor provides a strong incentive for its further development toward practical implementation in sub-relativistic UED experiments requiring the highest possible source brightness.

36 citations

Journal ArticleDOI
TL;DR: In this article, the effects of annealing ZnO in hydrogen, oxygen, and argon have been investigated using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) measurements.
Abstract: Effects of annealing ZnO in hydrogen, oxygen, and argon have been investigated using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) measurements. Current-voltage (IV) measurements indicate a decrease in zero–bias barrier height for all the annealed samples. Conventional DLTS measurements reveal the presence of three prominent peaks in the un-annealed and annealed samples. A new peak with an activation enthalpy of 0.60 eV has been observed in the H2 annealed samples, while an estimated energy level of 0.67 eV has been observed in Ar annealed samples. O2 annealing does not introduce new peaks but causes a decrease in the concentration of the E3 peak and an increase in concentration of the E1 peak. The concentrations of all the intrinsic defects have decreased after H2 and Ar annealing; with Ar annealing giving peaks with the lowest concentrations. The E2 peak anneals out after annealing ZnO in Ar and H2 at 300 °C. From the annealing behaviour of E3, we have attributed to transition metal ...

33 citations


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01 Jan 2011

2,117 citations

Journal ArticleDOI
TL;DR: A detailed review of the technical progress that made this new level of acuity possible and a survey of the new insights gained from an atomic level perspective of structural dynamics can be found in this article.
Abstract: One of the great dream experiments in Science is to directly observe atomic motions as they occur. Femtosecond electron diffraction provided the first 'light' of sufficient intensity to achieve this goal by attaining atomic resolution to structural changes on the relevant timescales. This review covers the technical progress that made this new level of acuity possible and gives a survey of the new insights gained from an atomic level perspective of structural dynamics. Atomic level views of the simplest possible structural transition, melting, are discussed for a number of systems in which both thermal and purely electronically driven atomic displacements can be correlated with the degree of directional bonding. Optical manipulation of charge distributions and effects on interatomic forces/bonding can be directly observed through the ensuing atomic motions. New phenomena involving strongly correlated electron?lattice systems are also discussed in which optically induced changes in the potential energy landscape lead to ballistic structural changes. Concepts such as the structural order parameters are now directly observable at the atomic level of inspection to give a remarkable view of the extraordinary degree of cooperativity involved in strongly correlated electron?lattice systems. These recent examples, in combination with time-resolved real space imaging now possible with electron probes, are truly defining an emerging field that holds great promise to make a significant impact in how we understand structural dynamics.This article is dedicated to the memory of Professor David John Hugh Cockayne, a world leader in electron microscopy, who sadly passed away in December.

479 citations

01 Jan 2003
TL;DR: In this paper, the thermal and epithermal self-shielding factors in different materials (Al, Au, Cd, Co, Cu, Eu, Gd, In, Ir, Mo, Ni, Pt, Pb, Rh, Sc, Sm and Ta) and different geometries (foils, wires, spheres and) have been calculated using the MCNP code.
Abstract: The presence of a sample in the neutron field of a nuclear reactor creates a perturbation of the local neutron fluxes. In general, the interpretation of the sample activation due to thermal and epithermal neutrons requires the knowledge of two corrective parameters: the thermal neutron self-shielding factor, Gth, and the resonance neutron self-shielding factor, Gres. Thermal neutron self-shielding factors in different materials (Al, Au, Cd, Co, Cu, Eu, Gd, In, Ir, Mo, Ni, Pt, Pb, Rh, Sc, Sm and Ta) and different geometries (foils, wires, spheres and) have been calculated by using the MCNP code.

473 citations