Author
Seung-Muk Bae
Other affiliations: Hongik University
Bio: Seung-Muk Bae is an academic researcher from Kunsan National University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 6, co-authored 23 publications receiving 117 citations. Previous affiliations of Seung-Muk Bae include Hongik University.
Papers
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TL;DR: In this paper, the growth density of ZnO nanorods was modulated through controlling the density of dispersed ZNO nanocrystals dispersed on a Si substrate, which was varied by the concentration of a polyol-polymer solution.
25 citations
TL;DR: In this article, the electrical and optical properties of ZnO thin films were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry.
Abstract: Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.
20 citations
TL;DR: In this paper, a SiO 2 gate dielectric was applied to amorphous oxide thin-film transistors constructed from InGa-Zn-O (IGZO) oxide layers, which functioned as channel layers in the bottom-gated thin film transistor (TFT) structure.
16 citations
TL;DR: In this paper, the authors applied semantic segmentation to quantification of microstructural features in three-phase composite cathode materials of solid oxide fuel cells (SOFCs), i.e., GDC/LSC/Pore where GDC stands for Gd2O3-doped CeO2 and LSC for La 0.6Sr0.4CoO3δ.
13 citations
TL;DR: In this paper, boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp.
10 citations
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TL;DR: An overview of the current state of ZnO ALD research including the applications that are being considered for thin-film applications can be found in this article, where the authors present a review of the state-of-the-art applications of ALD-based thin-filters.
Abstract: Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more and more interest in the last 20?years as a potential material for applications such as thin-film transistors, light-emitting diodes and gas sensors. At the same time, the increasingly stringent requirements of the microelectronics industry, among other factors, have led to a dramatic increase in the use of atomic layer deposition (ALD) technique in various thin-film applications. During this time, the research on ALD-grown ZnO thin films has developed from relatively simple deposition studies to the fabrication of increasingly intricate nanostructures and an understanding of the factors affecting the fundamental properties of the films. In this review, we give an overview of the current state of ZnO ALD research including the applications that are being considered for ZnO thin films.
336 citations
TL;DR: In this paper, a new approach for fabricating polyethersulfone (PES)/ZnO ultrafiltration membrane is demonstrated by using nano ZnO coated with polyvinylpyrrolidone and using dimethylformamide (DMF) as the solvent.
148 citations
TL;DR: In this paper, a comprehensive review of the applicable techniques for the characterization of the healing products, the microstructure, and the healing process of self-healing materials is provided.
74 citations
68 citations
01 Jan 2004
TL;DR: In this article, the authors compared the results of PEALD-TiN with the previous results of ALD-TiCl 4 precursor as the titanium source with in situ reduction and showed that the concept of self-saturating reaction in ALD does not correspond completely in PEALD.
Abstract: This study explores TiN film deposition using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique comparing the results of PEALD-TiN with the previous results of ALD-TiN and ALD-TiN with in situ reduction. Each of the studies used the TiCl 4 precursor as the titanium source. The ALD-TiN study used ammonia as the reducing agent. Nitrogen and hydrogen gases are not reactive in the ALD-TiN deposition, but they were successfully used in PEALD-TiN. This study shows that the concept of self-saturating reaction in ALD does not correspond completely in PEALD. The number of active sites and the film composition can be changed by the plasma pulsing parameters. In all deposition techniques the TiN films exhibit excellent film properties including a low resistivity, low impurity concentration, high density, and stoichiometric film. PEALD affords significant advantages if the deposition temperature was lower than 350 °C.
67 citations