Seungmin Lee

Bio: Seungmin Lee is an academic researcher from Electronics and Telecommunications Research Institute. The author has contributed to research in topics: Encryption & Thermal conductivity. The author has an hindex of 20, co-authored 81 publications receiving 2673 citations. Previous affiliations of Seungmin Lee include University of Illinois at Urbana–Champaign & LG Electronics.

Heat transport in thin dielectric films

Abstract: Heat transport in 20–300 nm thick dielectric films is characterized in the temperature range of 78–400 K using the 3ω method. SiO2 and SiNx films are deposited on Si substrates at 300 °C using plasma enhanced chemical vapor deposition (PECVD). For films >100 nm thick, the thermal conductivity shows little dependence on film thickness: the thermal conductivity of PECVD SiO2 films is only ∼10% smaller than the conductivity of SiO2 grown by thermal oxidation. The thermal conductivity of PECVD SiNx films is approximately a factor of 2 smaller than SiNx deposited by atmospheric pressure CVD at 900 °C. For films <50 nm thick, the apparent thermal conductivity of both SiO2 and SiNx films decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. At room temperature, RI∼2×10−8 K m2 W−1 and is equivalent to the thermal resistance of a ∼20 nm thick layer of SiO2 .

Thermal conductivity of Si–Ge superlattices

Abstract: The thermal conductivity of Si–Ge superlattices with superlattice periods 30 2 × 109 W m−2 K−1 at 200 K. Superlattices with relatively longer periods, L>130 A, have smaller thermal conductivities than the short-period samples. This unexpected result is attributed to a strong disruption of the lattice vibrations by extended defects produced during lattice-mismatched growth.

A novel hybrid intrusion detection method integrating anomaly detection with misuse detection

Abstract: In this paper, a new hybrid intrusion detection method that hierarchically integrates a misuse detection model and an anomaly detection model in a decomposition structure is proposed. First, a misuse detection model is built based on the C4.5 decision tree algorithm and then the normal training data is decomposed into smaller subsets using the model. Next, multiple one-class SVM models are created for the decomposed subsets. As a result, each anomaly detection model does not only use the known attack information indirectly, but also builds the profiles of normal behavior very precisely. The proposed hybrid intrusion detection method was evaluated by conducting experiments with the NSL-KDD data set, which is a modified version of well-known KDD Cup 99 data set. The experimental results demonstrate that the proposed method is better than the conventional methods in terms of the detection rate for both unknown and known attacks while it maintains a low false positive rate. In addition, the proposed method significantly reduces the high time complexity of the training and testing processes. Experimentally, the training and testing time of the anomaly detection model is shown to be only 50% and 60%, respectively, of the time required for the conventional models.

Thermal conductivity of sputtered oxide films

Abstract: The thermal conductivity of oxide thin films deposited using dc, rf, and ion-beam sputtering is measured in the temperature range 80--400 K using the 3{omega} method. Thermal conductivity data for amorphous thin films of SiO{sub 2} are nearly identical to bulk {ital a}-SiO{sub 2}. Data for amorphous Al{sub 2}O{sub 3}, while having a magnitude and temperature dependence similar to bulk amorphous oxides, show a dependence on deposition method; rf sputtering of an Al{sub 2}O{sub 3} target produces films with a thermal conductivity 35% smaller than films prepared by ion-beam sputtering. Microcrystalline thin films show a rich variety of behavior: the conductivity of TiO{sub 2} films depends on the substrate tempreature {ital T}{sub {ital s}} and approaches the thermal conductivity of bulk TiO{sub 2} ceramics when {ital T}{sub {ital s}}{congruent}400 {degree}C; HfO{sub 2} films show glasslike thermal conductivity independent of annealing temperature up to 900 {degree}C; and MgO films display a crystalline thermal conductivity that is greatly reduced relative bulk values.

Interface thermal conductance and the thermal conductivity of multilayer thin films

Abstract: Accurate and simple measurements of the thermal conductivity of thin films deposited on high thermal conductivity substrates have been recently enabled by the development of an AC hot-wire method, the 3ω method. Recent progress in the measurement and understanding of heat transport in ultra-thin films (1 μm thick) and multilayers is reviewed, and the possibility of using solid-solid interfaces on nanometer length scales to control heat transport in thin film materials is explored. The finite thermal conductance of solid-solid interfaces becomes important when considering heat transport in single layer films < 100 nm thick. Through the use of multilayer films-for example, epitaxial superlattices of crystalline semiconductors or nanometer-thick layers of amorphous and microcrystalline oxides-we can study materials with an extremely high and controllable density of internal interfaces, and evaluate the effect of these interfaces on heat transport. For the case of Si-Ge superlattices, the relatively large mismatch of the vibrational properties of silicon and germanium creates a larger reduction in thermal conductivity than for GaAs-AlAs superlattices. Surprisingly, heat conduction in multilayers of disordered oxides is essentially unchanged by a high interface density.

Thin-film thermoelectric devices with high room-temperature figures of merit

Abstract: Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.

Microstrip filters for RF/microwave applications

Abstract: Preface to the Second Edition. Preface to the First Edition. 1 Introduction. 2 Network Analysis. 2.1 Network Variables. 2.2 Scattering Parameters. 2.3 Short-Circuit Admittance Parameters. 2.4 Open-Circuit Impedance Parameters. 2.5 ABCD Parameters. 2.6 Transmission-Line Networks. 2.7 Network Connections. 2.8 Network Parameter Conversions. 2.9 Symmetrical Network Analysis. 2.10 Multiport Networks. 2.11 Equivalent and Dual Network. 2.12 Multimode Networks. 3 Basic Concepts and Theories of Filters. 3.1 Transfer Functions. 3.2 Lowpass Prototype Filters and Elements. 3.3 Frequency and Element Transformations. 3.4 Immittance Inverters. 3.5 Richards' Transformation and Kuroda Identities. 3.6 Dissipation and Unloaded Quality Factor. 4 Transmission Lines and Components. 4.1 Microstrip Lines. 4.2 Coupled Lines. 4.3 Discontinuities and Components. 4.4 Other Types of Microstrip Lines. 4.5 Coplanar Waveguide (CPW). 4.6 Slotlines. 5 Lowpass and Bandpass Filters. 5.1 Lowpass Filters. 5.2 Bandpass Filters. 6 Highpass and Bandstop Filters. 6.1 Highpass Filters. 6.2 Bandstop Filters. 7 Coupled-Resonator Circuits. 7.1 General Coupling Matrix for Coupled-Resonator Filters. 7.2 General Theory of Couplings. 7.3 General Formulation for Extracting Coupling Coefficient k. 7.4 Formulation for Extracting External Quality Factor Qe. 7.5 Numerical Examples. 7.6 General Coupling Matrix Including Source and Load. 8 CAD for Low-Cost and High-Volume Production. 8.1 Computer-Aided Design (CAD) Tools. 8.2 Computer-Aided Analysis (CAA). 8.3 Filter Synthesis by Optimization. 8.4 CAD Examples. 9 Advanced RF/Microwave Filters. 9.1 Selective Filters with a Single Pair of Transmission Zeros. 9.2 Cascaded Quadruplet (CQ) Filters. 9.3 Trisection and Cascaded Trisection (CT) Filters. 9.4 Advanced Filters with Transmission-Line Inserted Inverters. 9.5 Linear-Phase Filters. 9.6 Extracted Pole Filters. 9.7 Canonical Filters. 9.8 Multiband Filters. 10 Compact Filters and Filter Miniaturization. 10.1 Miniature Open-Loop and Hairpin Resonator Filters. 10.2 Slow-Wave Resonator Filters. 10.3 Miniature Dual-Mode Resonator Filters. 10.4 Lumped-Element Filters. 10.5 Miniature Filters Using High Dielectric-Constant Substrates. 10.6 Multilayer Filters. 11 Superconducting Filters. 11.1 High-Temperature Superconducting (HTS) Materials. 11.2 HTS Filters for Mobile Communications. 11.3 HTS Filters for Satellite Communications. 11.4 HTS Filters for Radio Astronomy and Radar. 11.5 High-Power HTS Filters. 11.6 Cryogenic Package. 12 Ultra-Wideband (UWB) Filters. 12.1 UWB Filters with Short-Circuited Stubs. 12.2 UWB-Coupled Resonator Filters. 12.3 Quasilumped Element UWB Filters. 12.4 UWB Filters Using Cascaded Miniature High- And Lowpass Filters. 12.5 UWB Filters with Notch Band(s). 13 Tunable and Reconfigurable Filters. 13.1 Tunable Combline Filters. 13.2 Tunable Open-Loop Filters without Via-Hole Grounding. 13.3 Reconfigurable Dual-Mode Bandpass Filters. 13.4 Wideband Filters with Reconfigurable Bandwidth. 13.5 Reconfigurable UWB Filters. 13.6 RF MEMS Reconfigurable Filters. 13.7 Piezoelectric Transducer Tunable Filters. 13.8 Ferroelectric Tunable Filters. Appendix: Useful Constants and Data. A.1 Physical Constants. A.2 Conductivity of Metals at 25 C (298K). A.3 Electical Resistivity rho in 10-8 m of Metals. A.4 Properties of Dielectric Substrates. Index.

Nanoscale thermal transport

Abstract: Rapid progress in the synthesis and processing of materials with structure on nanometer length scales has created a demand for greater scientific understanding of thermal transport in nanoscale devices, individual nanostructures, and nanostructured materials. This review emphasizes developments in experiment, theory, and computation that have occurred in the past ten years and summarizes the present status of the field. Interfaces between materials become increasingly important on small length scales. The thermal conductance of many solid–solid interfaces have been studied experimentally but the range of observed interface properties is much smaller than predicted by simple theory. Classical molecular dynamics simulations are emerging as a powerful tool for calculations of thermal conductance and phonon scattering, and may provide for a lively interplay of experiment and theory in the near term. Fundamental issues remain concerning the correct definitions of temperature in nonequilibrium nanoscale systems. Modern Si microelectronics are now firmly in the nanoscale regime—experiments have demonstrated that the close proximity of interfaces and the extremely small volume of heat dissipation strongly modifies thermal transport, thereby aggravating problems of thermal management. Microelectronic devices are too large to yield to atomic-level simulation in the foreseeable future and, therefore, calculations of thermal transport must rely on solutions of the Boltzmann transport equation; microscopic phonon scattering rates needed for predictive models are, even for Si, poorly known. Low-dimensional nanostructures, such as carbon nanotubes, are predicted to have novel transport properties; the first quantitative experiments of the thermal conductivity of nanotubes have recently been achieved using microfabricated measurement systems. Nanoscale porosity decreases the permittivity of amorphous dielectrics but porosity also strongly decreases the thermal conductivity. The promise of improved thermoelectric materials and problems of thermal management of optoelectronic devices have stimulated extensive studies of semiconductor superlattices; agreement between experiment and theory is generally poor. Advances in measurement methods, e.g., the 3ω method, time-domain thermoreflectance, sources of coherent phonons, microfabricated test structures, and the scanning thermal microscope, are enabling new capabilities for nanoscale thermal metrology.

[서평]「Applied Cryptography」

Abstract: The objective of this paper is to give a comprehensive introduction to applied cryptography with an engineer or computer scientist in mind. The emphasis is on the knowledge needed to create practical systems which supports integrity, confidentiality, or authenticity. Topics covered includes an introduction to the concepts in cryptography, attacks against cryptographic systems, key use and handling, random bit generation, encryption modes, and message authentication codes. Recommendations on algorithms and further reading is given in the end of the paper. This paper should make the reader able to build, understand and evaluate system descriptions and designs based on the cryptographic components described in the paper.

Silicon microring resonators

Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.