Reactive matching is extended to wide bandwidths using the impedance property of LC-ladder filters. In this paper, we present a systematic method to design wideband low-noise amplifiers. An SiGe amplifier with on-chip matching network spanning 3-10 GHz delivers 21-dB peak gain, 2.5-dB noise figure, and -1-dBm input IP3 at 5 GHz, with a 10-mA bias current.

A 3-10-Ghz low-noise amplifier with wideband LC-ladder matching network

The design details and measurement results for a cooled L-band (1 to 2 GHz) balanced high electron mobility transistor (HEMT) amplifier are presented. The amplifier uses commercially available packaged HEMT devices (Fujitsu FHR02FH). At a physical temperature of 12 K, the amplifier achieves noise temperatures between 3 and 6 K over the 1 to 2 GHz band. The associated gain is approximately 20 dB.

A cooled 1- to 2-GHz balanced HEMT amplifier

This paper proposes a 110% relative bandwidth (RBW) low-noise amplifier (LNA) for broadband receivers with flat gain, low noise and high linearity. Bias and parasitic parameters derived wide bandpass (BPDWB) matching networks and a cascode with dual feedbacks are introduced for broadband performance. Matching network design procedures are demonstrated, and results show that the frequency response of the network fits the target impedance well from 1 GHz to 3.5 GHz. The proposed BPDWB network improves the design efficiency and enhances the prediction accuracy of impedance matching. The proposed LNA in 0.25 μm GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) technology realizes a minimum NF of 0.45 dB at 1.6 GHz where the NF is less than 0.55 dB within the operating frequency band. A flat gain of 22.5–25.2 dB is achieved with the input voltage standing wave ratio (VSWR) below 1.22 and output VSWR less than 2.5. In addition, the proposed LNA has good linearity where the output third-order intercept point (OIP3) is better than +31.5 dBm, and the output 1 dB compression point (OP1dB) is better than +19 dBm over the wide frequency range.

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Analysis and Design of a Wideband Low-Noise Amplifier with Bias and Parasitic Parameters Derived Wide Bandpass Matching Networks

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

On 32-GHz cryogenically cooled HEMT low-noise amplifiers

This paper presents the circuit of a low-noise amplifier (LNA) using active inductor (AI) input matching with common gate (CG) current-reused technique. This configuration is implemented in 90 nm CMOS and enables to achieve high power-gain (S 21 ) with ultra-wideband (UWB) input matching at low power levels. Utilization of modified high-Q AI at the input side of the proposed LNA reduces the number of inductors and achieves UWB from only two inductors. Proposed LNA dissipates 10.4 mW from 1.0 V supply and exhibits an S 21 response of 18.0 ± 0.8 dB for 3.1–10.6 GHz with a maximum and average S 21 of 18.8 dB and 18.22 dB, respectively. The proposed LNA has noise-figure (NF) equal to 3.36–4.68 dB, with input (S 11 ) and output (S 22 ) reflection coefficients of less than − 9.3 dB and − 11.35 dB, respectively across the entire UWB range.

https://doi.org/10.54614/electrica.2022.21136

Shahab Shahrabadi

Papers

Ultrawideband LNA 1960–2019: Review

Noise figure and input intercept point's errors in an AGC-less microwatt ultrawideband system (limiter and low noise amplifier)