Shaibal Mukherjee

Bio: Shaibal Mukherjee is an academic researcher from Indian Institute of Technology Indore. The author has contributed to research in topics: Thin film & Sputtering. The author has an hindex of 21, co-authored 134 publications receiving 1306 citations. Previous affiliations of Shaibal Mukherjee include University of Oklahoma & Indian Institutes of Technology.

Forming-free high-endurance Al/ZnO/Al memristor fabricated by dual ion beam sputtering

Abstract: We report dual ion beam sputtering fabrication of an Al/ZnO/Al memristor displaying forming-free bipolar resistive switching characteristics with memristive behavior without necessitating any post-processing steps. A nearly amorphous ZnO thin film and an appropriate concentration of oxygen vacancies play a significant role in imparting forming-free, stable, and reliable behavior to memory cells. Besides, sufficient non-lattice oxygen ions in the film play a crucial role in the resistive switching process. The AlOx interface layer is observed to strongly affect the switching mechanism in the memory device by altering the barrier at the Al/ZnO interface. The device shows stable switching behavior for >250 cycles with good retention and stable set/reset voltages.

Influence of oxygen passivation on optical properties of PbSe thin films

Abstract: A series of PbSe thin films grown on a (111)-oriented Si substrate by molecular beam epitaxy were passivated by high-purity oxygen at different annealing temperatures. The photoluminescence intensity increased by more than two orders of magnitude at 4.5μm after annealing the samples in an O2 atmosphere at 350°C. X-ray photoelectron spectroscopy revealed that PbO and SeO2 were formed during the oxidation process of PbSe, thus confirming the formation of the surface passivation layer which resulted in the observed significant increase in PL intensity.

Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Abstract: Sb-doped ZnO (SZO) films were deposited on c-plane sapphire substrates by dual ion beam sputtering deposition system and subsequently annealed in-situ in vacuum and in various proportions of O2/(O2 + N2)% from 0% (N2) to 100% (O2). Hall measurements established all SZO films were p-type, as was also confirmed by typical diode-like rectifying current-voltage characteristics from p-ZnO/n-ZnO homojunction. SZO films annealed in O2 ambient exhibited higher hole concentration as compared with films annealed in vacuum or N2 ambient. X-ray photoelectron spectroscopic analysis confirmed that Sb5+ states were more preferable in comparison to Sb3+ states for acceptor-like SbZn-2VZn complex formation in SZO films.

Effect of growth temperature on structural, electrical and optical properties of dual ion beam sputtered ZnO thin films

Abstract: ZnO epitaxial thin films were grown on p-type Si(100) substrates by dual ion beam sputtering deposition system. The crystalline quality, surface morphology, optical and electrical properties of as-deposited ZnO thin films at different growth temperatures were studied. Substrate temperature was varied from 100 to 600 °C at constant oxygen percentage O2/(O2 + Ar) % of 66.67 % in a mixed gas of Ar and O2 with constant chamber pressure of 2.75 × 10−4 mBar. X-Ray diffraction analyses revealed that all the films had (002) preferred orientation. The minimum value of stress was reported to be −0.32 × 1010 dyne/cm2 from ZnO film grown at 200 °C. Photoluminescence measurements demonstrated sharp near-band-edge emission (NBE) was observed at ~375 nm along with deep level emission (DLE) in the visible spectral range at room temperature. The DLE Peak was found to have decrement as ZnO growth temperature was increased from 200 to 600 °C. The minimum FWHM of the NBE peak of 16.76 nm was achieved at 600 °C growth temperature. X-Ray photoelectron spectroscopy study revealed presence of oxygen interstitials and vacancies point defects in ZnO film grown at 400 °C. The ZnO thin film was found to be highly resistive when grown at 100 °C. The ZnO films were found to be n-type conducting with decreasing resistivity on increasing substrate temperature from 200 to 500 °C and again increased for film grown at 600 °C. Based on these studies a correlation between native point defects, optical and electrical properties has been established.

Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: A case study of GZO

Abstract: The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87–10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetect...

Photonic crystals

Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

A comprehensive review on emerging artificial neuromorphic devices

Abstract: The rapid development of information technology has led to urgent requirements for high efficiency and ultralow power consumption. In the past few decades, neuromorphic computing has drawn extensive attention due to its promising capability in processing massive data with extremely low power consumption. Here, we offer a comprehensive review on emerging artificial neuromorphic devices and their applications. In light of the inner physical processes, we classify the devices into nine major categories and discuss their respective strengths and weaknesses. We will show that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry. Meanwhile, the recently developed electrolyte-gated synaptic transistors have demonstrated outstanding energy efficiency, linearity, and symmetry, but their stability and scalability still need to be optimized. Other emerging synaptic structures, such as ferroelectric, metal–insulator transition based, photonic, and purely electronic devices also have limitations in some aspects, therefore leading to the need for further developing high-performance synaptic devices. Additional efforts are also demanded to enhance the functionality of artificial neurons while maintaining a relatively low cost in area and power, and it will be of significance to explore the intrinsic neuronal stochasticity in computing and optimize their driving capability, etc. Finally, by looking into the correlations between the operation mechanisms, material systems, device structures, and performance, we provide clues to future material selections, device designs, and integrations for artificial synapses and neurons.

RaoP-Type ZnO Materials: Theory, Growth, Properties, and Devices

Abstract: Abstract In the past 10 years, ZnO as a semiconductor has attracted considerable attention due to its unique properties, such as high electron mobility, wide and direct band gap and large exciton binding energy. ZnO has been considered a promising material for optoelectronic device applications, and the fabrications of high quality p-type ZnO and p–n junction are the key steps to realize these applications. However, the reliable p-type doping of the material remains a major challenge because of the self-compensation from native donor defects (V O and Zn i ) and/or hydrogen incorporation. Considerable efforts have been made to obtain p-type ZnO by doping different elements with various techniques. Remarkable progresses have been achieved, both theoretically and experimentally. In this paper, we discuss p-type ZnO materials: theory, growth, properties and devices, comprehensively. We first discuss the native defects in ZnO. Among the native defects in ZnO, V Zn and O i act as acceptors. We then present the theory of p-type doping in ZnO, and summarize the growth techniques for p-type ZnO and the properties of p-type ZnO materials. Theoretically, the principles of selection of p-type dopant, codoping method and X Zn –2V Zn acceptor model are introduced. Experimentally, besides the intrinsic p-type ZnO grown at O-rich ambient, p-type ZnO (MgZnO) materials have been prepared by various techniques using Group-I, IV and V elements. We pay a special attention to the band gap of p-type ZnO by band-gap engineering and room temperature ferromagnetism observed in p-type ZnO. Finally, we summarize the devices based on p-type ZnO materials.

High-performance midinfrared quantum cascade lasers

Abstract: The design and operating principles of quantum cascade lasers (QCLs) are reviewed along with recent developments in high-power cw and broadband devices. Cw power levels of several watts at room temperature have been achieved at 4.6-µm wavelength; broadband single-mode tuning (400 cm−1) has been achieved using an external-cavity QCL with a grating as a tuning element. An alternative approach, consisting of a monolithically integrated array of single-mode QCLs individually current-driven by a microcontroller, has led to broadband single-mode tuning over a range of 200 cm−1 without requiring the use of moving parts. This spectrometer on a chip holds promise for high-brightness compact trace-gas sensors capable of operating in harsh environments.