Shalom J. Wind

Bio: Shalom J. Wind is an academic researcher from Columbia University. The author has contributed to research in topics: Carbon nanotube & Field-effect transistor. The author has an hindex of 43, co-authored 137 publications receiving 9978 citations. Previous affiliations of Shalom J. Wind include IBM.

CMOS scaling into the nanometer regime

Abstract: Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling.

Carbon nanotube electronics

Abstract: We evaluate the potential of carbon nanotubes (CNTs) as the basis for a new nanoelectronic technology. After briefly reviewing the electronic structure and transport properties of CNTs, we discuss the fabrication of CNT field-effect transistors (CNTFETs) formed from individual single-walled nanotubes (SWCNTs), SWCNT bundles, or multiwalled (MW) CNTs. The performance characteristics of the CNTFETs are discussed and compared to those of corresponding silicon devices. We show that CNTFETs are very competitive with state-of-the-art conventional devices. We also discuss the switching mechanism of CNTFETs and show that it involves the modulation by the gate field of Schottky barriers at the metal-CNT junctions. This switching mechanism can account for the observed subthreshold and vertical scaling behavior of CNTFETs, as well as their sensitivity to atmospheric oxygen. The potential for integration of CNT devices is demonstrated by fabricating a logic gate along a single nanotube molecule. Finally, we discuss our efforts to grow CNTs locally and selectively, and a method is presented for growing oriented SWCNTs without the involvement of a metal catalyst.

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

Abstract: We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V—a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric Our measured device performance also compares very well to state-of-the-art silicon devices These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications

An integrated logic circuit assembled on a single carbon nanotube.

Abstract: Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor‐type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.

Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

Abstract: Materials showing reversible resistive switching are attractive for today’s semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator–conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Cognitive radio: brain-empowered wireless communications

Abstract: Cognitive radio is viewed as a novel approach for improving the utilization of a precious natural resource: the radio electromagnetic spectrum. The cognitive radio, built on a software-defined radio, is defined as an intelligent wireless communication system that is aware of its environment and uses the methodology of understanding-by-building to learn from the environment and adapt to statistical variations in the input stimuli, with two primary objectives in mind: /spl middot/ highly reliable communication whenever and wherever needed; /spl middot/ efficient utilization of the radio spectrum. Following the discussion of interference temperature as a new metric for the quantification and management of interference, the paper addresses three fundamental cognitive tasks. 1) Radio-scene analysis. 2) Channel-state estimation and predictive modeling. 3) Transmit-power control and dynamic spectrum management. This work also discusses the emergent behavior of cognitive radio.

Quantum Dot Bioconjugates for Ultrasensitive Nonisotopic Detection

Abstract: Highly luminescent semiconductor quantum dots (zinc sulfide-capped cadmium selenide) have been covalently coupled to biomolecules for use in ultrasensitive biological detection. In comparison with organic dyes such as rhodamine, this class of luminescent labels is 20 times as bright, 100 times as stable against photobleaching, and one-third as wide in spectral linewidth. These nanometer-sized conjugates are water-soluble and biocompatible. Quantum dots that were labeled with the protein transferrin underwent receptor-mediated endocytosis in cultured HeLa cells, and those dots that were labeled with immunomolecules recognized specific antibodies or antigens.

High-κ gate dielectrics: Current status and materials properties considerations

Abstract: Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success...

Nanoionics-based resistive switching memories

Abstract: Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.