Shaloo Rakheja

TL;DR: Physical models of the electron transport parameters such as electron mean free path (MFP), diffusion coefficient, mobility, and resistance per unit length are presented for both bulk and narrow graphene nanoribbons as a function of the interconnect dimensions, edge roughness, and Fermi-energy shift and offer important insights about the advantages and limitations of graphene interconnects.

TL;DR: In this article, physical models are derived for the effective resistance of multilayer graphene nanoribbon (m-GNR) interconnects, and the optimal number of layers to minimize the delay and the energy-delay product is also evaluated.

TL;DR: In this article, the authors provide a glimpse of future GaN device technologies and advanced modeling approaches that can push the boundaries of these applications in terms of performance and reliability, which is a key missing piece to realize the full GaN platform with integrated digital, power, and RF electronics technologies.

TL;DR: In this paper, a compact physics-based ambipolar-virtual-source (AVS) model is presented that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic GFETs.

TL;DR: In this paper, compact circuit models for spintronic devices have been developed by manipulating the underlying physical equations, such as the magnetization dynamics governed by the Landau-Lifshitz-Gilbert (LLG) equation and the spin transport physics governed by spin drift-diffusion equation.