S
Shaochuan Chen
Researcher at Soochow University (Suzhou)
Publications - 17
Citations - 870
Shaochuan Chen is an academic researcher from Soochow University (Suzhou). The author has contributed to research in topics: Graphene & Computer science. The author has an hindex of 8, co-authored 14 publications receiving 463 citations. Previous affiliations of Shaochuan Chen include University of California, Santa Barbara & Rovira i Virgili University.
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Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
Journal ArticleDOI
Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
Shaochuan Chen,Shaochuan Chen,Mohammad Reza Mahmoodi,Yuanyuan Shi,Chandreswar Mahata,Bin Yuan,Xianhu Liang,Chao Wen,Fei Hui,Deji Akinwande,Dmitri B. Strukov,Mario Lanza +11 more
TL;DR: In this article, high-density memristive crossbar arrays made from two-dimensional hexagonal boron nitride can be fabricated with a yield of 98% and used to emulate artificial neural networks.
Journal ArticleDOI
Resistive Random Access Memory Cells with a Bilayer TiO2/SiOX Insulating Stack for Simultaneous Filamentary and Distributed Resistive Switching
Na Xiao,Marco A. Villena,Bin Yuan,Shaochuan Chen,Bingru Wang,Marek Eliáš,Yuanyuan Shi,Yuanyuan Shi,Fei Hui,Fei Hui,Xu Jing,Andrew G. Scheuermann,Kechao Tang,Paul C. McIntyre,Mario Lanza +14 more
TL;DR: In this paper, a novel strategy is presented to further extend the performance of RRAMs by using only cheap and industry friendly materials (Ti, TiO2, SiOX, and n++Si), memory cells are developed that show both filamentary and distributed resistive switching simultaneously.
Journal ArticleDOI
Graphene-Boron Nitride-Graphene Cross-Point Memristors with Three Stable Resistive States.
Kaichen Zhu,Kaichen Zhu,Xianhu Liang,Bin Yuan,Marco A. Villena,Chao Wen,Tao Wang,Shaochuan Chen,Fei Hui,Yuanyuan Shi,Mario Lanza +10 more
TL;DR: The first 2D materials based memristors that exhibit three stable and well-distinguishable resistive states are presented, named soft-LRS (S-L RS), which may be related to the formation of a narrower conductive nanofilament across the h-BN, due to the ability of graphene to limit metal penetration (at low current limitations).
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,Hsp Wong,Eric Pop,Daniele Ielmini,Dmitri B. Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: In this article, the most recommendable methodologies for the fabrication, characterization, and simulation of resistive switching (RS) devices, as well as the proper methods to display the data obtained, are described.