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Sharif Md. Sadaf

Researcher at National Research Council

Publications -  58
Citations -  1589

Sharif Md. Sadaf is an academic researcher from National Research Council. The author has contributed to research in topics: Nanowire & Light-emitting diode. The author has an hindex of 18, co-authored 41 publications receiving 1292 citations. Previous affiliations of Sharif Md. Sadaf include Institut national de la recherche scientifique & McGill University.

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Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

TL;DR: By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowire LEDs with emission wavelengths covering the UV-B/C bands, which is nearly ten times higher compared to high quality planar AlN.
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Full-Color Single Nanowire Pixels for Projection Displays.

TL;DR: The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.
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An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band

TL;DR: It is demonstrated that critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures, which exhibit high photoluminescence efficiency in the UV-C band at room temperature and nearly one order of magnitude reduction in the device resistance.
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Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p -AlGaN Electron Blocking Layers

TL;DR: This work reports on the demonstration of a new type of axial nanowire LED heterostructures, with the use of self-organized InGaN/AlGaN dot-in-a-wire core-shell Nanowire arrays, which is found to be more effective in reducing electron overflow, compared to the conventional AlGaN EBL.
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Diode-less bilayer oxide (WOx?NbOx) device for cross-point resistive memory applications

TL;DR: It is shown that electroformed W-NbO(x)-Pt devices can simultaneously exhibit both threshold switching and memory switching.