S
Sheng-Yao Huang
Researcher at National Sun Yat-sen University
Publications - 17
Citations - 763
Sheng-Yao Huang is an academic researcher from National Sun Yat-sen University. The author has contributed to research in topics: Resistive random-access memory & Amorphous solid. The author has an hindex of 12, co-authored 17 publications receiving 715 citations.
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Journal ArticleDOI
Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films
Min-Chen Chen,Ting-Chang Chang,Chih-Tsung Tsai,Sheng-Yao Huang,Shih-Ching Chen,Chih-Wei Hu,Simon M. Sze,Ming-Jinn Tsai +7 more
TL;DR: In this article, the influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively.
Journal ArticleDOI
Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor
Te-Chih Chen,Ting-Chang Chang,Tien-Yu Hsieh,Wei-Siang Lu,Fu-Yen Jian,Chih-Tsung Tsai,Sheng-Yao Huang,Chia-Sheng Lin +7 more
TL;DR: In this article, the degradation mechanism of amorphous indium-gallium-zinc oxide thin-film transistors under gate-bias stress was investigated and it was shown that an extra electron trapping mechanism occurs during rising/falling time during the AC pulse period.
Journal ArticleDOI
Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
Min-Chen Chen,Ting-Chang Chang,Sheng-Yao Huang,Shih-Ching Chen,Chih-Wei Hu,Chih-Tsung Tsai,Simon M. Sze +6 more
TL;DR: In this paper, a sputtered InGaZnO (IGZO) thin film was applied into a resistive random access memory (RAM) device, which exhibited a repeatable bipolar resistance switching behavior without an electroforming process.
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A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
Min-Chen Chen,Ting-Chang Chang,Sheng-Yao Huang,Kuan-Chang Chang,Hung Wei Li,Shih-Ching Chen,Jin Lu,Yi Shi +7 more
TL;DR: In this article, a low-temperature method, supercritical CO2 (SCCO2) fluid technology, was employed to improve the device properties of ZnO TFT at 150 °C.
Journal ArticleDOI
Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation
Sheng-Yao Huang,Ting-Chang Chang,Min-Chen Chen,Shih-Ching Chen,Chih-Tsung Tsai,Ming-Chin Hung,Chun-Hao Tu,Chia-Hsiang Chen,Jiun Jye Chang,Wei-Lung Liau +9 more
TL;DR: In this paper, the effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive bias temperature stress were investigated.