Self-Powered Photodetectors Based on 2D Materials

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently emerged as a new class of atomically thin semiconductors for diverse electronic, optoelectronic, and valleytronic applications. To explore the full potential of these 2D semiconductors requires a precise control of their band gap and electronic properties, which represents a significant challenge in 2D material systems. Here we demonstrate a systematic control of the electronic properties of 2D-TMDs by creating mixed alloys of the intrinsically p-type WSe2 and intrinsically n-type WS2 with variable alloy compositions. We show that a series of WS2xSe2-2x alloy nanosheets can be synthesized with fully tunable chemical compositions and optical properties. Electrical transport studies using back-gated field effect transistors demonstrate that charge carrier types and threshold voltages of the alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. A highly p-type behavior is observed in selenium-rich alloy, which gradually shifts to lightly p-type, and then switches to lightly n-type characteristics with the increasing sulfur atomic ratio, and eventually evolves into highly n-doped semiconductors in sulfur-rich alloys. The synthesis of WS2xSe2-2x nanosheets with tunable optical and electronic properties represents a critical step toward rational design of 2D electronics with tailored spectral responses and device characteristics. © 2015 American Chemical Society.

Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

http://absimage.aps.org/image/MAR14/MWS_MAR14-2013-005031.pdf

Black Phosphorus Field-effect Transistors

Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.

2D material broadband photodetectors

https://onlinelibrary.wiley.com/doi/epdf/10.1002/inf2.12067

Recent advances in low-dimensional semiconductor nanomaterials and their applications in high-performance photodetectors

Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors

In the past decade, photo-detectors have been demonstrated to have very important applications in image sensing, optical communication, fire detection, environmental monitoring, space exploration, safety detection, and many other scientific research and industrial technology fields and are regarded as the key components of wearable devices. Compared to traditional fabrication approaches, pulsed-laser deposition (PLD)-grown materials for photo-detectors offer several merits. First, PLD is a clean physical vapor deposition approach. A stoichiometric amount of atoms can be transferred from the target to the substrate, avoiding complicated and potentially dangerous chemical reactions. Furthermore, the PLD process is carried out in a high-vacuum environment. Therefore, almost no contaminants, such as catalysts, precursors, surfactants and by-products, will be introduced. Also, the thickness of the films can be controlled by simply manipulating the energy and pulse number of the pulsed laser. Furthermore, the fabrication temperature is relatively low, which is available to deposit materials on various substrates, even flexible ones. Most importantly, PLD is a deposition technology with large area coverage, which can produce centimeter-scale thin films, the planar geometry of which has significant potential for compact device integration with modern semiconductor techniques. Consequently, this review introduces the recent advances on the materials, fabrication, and application of pulsed-laser deposition for a variety of high-performance photo-detectors from an overall perspective. Moreover, the challenges and future development trends are discussed.

Shi Peng Zhong

Papers

Broadband photodetectors based on 2D group IVA metal chalcogenides semiconductors

Recent progress in high-performance photo-detectors enabled by the pulsed laser deposition technology