Shiang-Tang Huang

Bio: Shiang-Tang Huang is an academic researcher from Cadence Design Systems. The author has contributed to research in topics: Process corners & Statistical static timing analysis. The author has an hindex of 2, co-authored 3 publications receiving 201 citations.

Systems, methods, and apparatus to perform statistical static timing analysis

Abstract: A method and an apparatus to perform statistical static timing analysis have been disclosed. In one embodiment, the method includes performing statistical analysis on performance data of a circuit from a plurality of libraries at two or more process corners using a static timing analysis module, and estimating performance of the circuit at a predetermined confidence level based on results of the statistical analysis during an automated design flow of the circuit without using libraries at the predetermined confidence level.

Methods and apparatus for performing statistical static timing analysis

Abstract: A method and an apparatus to perform statistical static timing analysis have been disclosed. In one embodiment, the method includes performing statistical analysis on performance data of a circuit from a plurality of libraries at two or more process corners using a static timing analysis module, and estimating performance of the circuit at a predetermined confidence level based on results of the statistical analysis during an automated design flow of the circuit without using libraries at the predetermined confidence level.

Method and an apparatus to perform statistical static timing analysis

Abstract: A method and an apparatus to perform statistical static timing analysis have been disclosed. In one embodiment, the method includes performing statistical analysis on performance data of a circuit from a plurality of libraries at two or more process corners using a static timing analysis module, and estimating performance of the circuit at a predetermined confidence level based on results of the statistical analysis during an automated design flow of the circuit without using libraries at the predetermined confidence level.

Dynamic array architecture

Abstract: A semiconductor device includes a substrate and a number of diffusion regions defined within the substrate. The diffusion regions are separated from each other by a non-active region of the substrate. The semiconductor device includes a number of linear gate electrode tracks defined to extend over the substrate in a single common direction. Each linear gate electrode track is defined by one or more linear gate electrode segments. Each linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrode segments within the linear gate electrode track, while ensuring adequate electrical isolation between the adjacent linear gate electrode segments.

Gate-length biasing for digital circuit optimization

Abstract: Methods and apparatus for a gate-length biasing methodology for optimizing integrated digital circuits are described. The gate-length biasing methodology replaces a nominal gate-length of a transistor with a biased gate-length, where the biased gate-length includes a bias length that is small compared to the nominal gate-length. In an exemplary embodiment, the bias length is less than 10% of the nominal gate-length.

Semiconductor Device Layout Including Cell Layout Having Restricted Gate Electrode Level Layout with Linear Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks with Minimum End-to-End Spacing with Corresponding Non-Symmetric Diffusion Regions

Abstract: A restricted layout region includes a diffusion level layout including p-type and n-type diffusion region layout shapes separated by a central inactive region. The diffusion region layout shapes are defined in a non-symmetrical manner relative to a centerline defined to bisect the diffusion level layout. A gate electrode level layout is defined to include linear-shaped layout features placed to extend in only a first parallel direction. Adjacent linear-shaped layout features that share a common line of extent in the first parallel direction are separated by an end-to-end spacing that is substantially equal across the gate electrode level layout and that is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level layout includes linear-shaped layout features defined along at least four different lines of extent in the first parallel direction. The restricted layout region corresponds to an entire gate electrode level of a cell layout.

Methods for Defining Dynamic Array Section with Manufacturing Assurance Halo and Apparatus Implementing the Same

Abstract: A method is disclosed for defining a dynamic array section to be manufactured on a semiconductor chip. The method includes defining a peripheral boundary of the dynamic array section. The method also includes defining a manufacturing assurance halo outside the boundary of the dynamic array section. The method further includes controlling chip layout features within the manufacturing assurance halo to ensure that manufacturing of conductive features inside the boundary of the dynamic array section is not adversely affected by chip layout features within the manufacturing assurance halo.

Semiconductor Device Portion Having Sub-Wavelength-Sized Gate Electrode Conductive Structures Formed from Rectangular Shaped Gate Electrode Layout Features Defined Along At Least Four Gate Electrode Tracks and Having Corresponding Non-Symmetric Diffusion Regions

Abstract: A substrate portion of a semiconductor device is formed to include a plurality of diffusion regions that are defined in a non-symmetrical manner relative to a virtual line defined to bisect the substrate portion. A gate electrode level region is formed above the substrate portion to include a number of conductive features defined to extend in only a first parallel direction. Each of the number of conductive features within the gate electrode level region is fabricated from a respective originating rectangular-shaped layout feature. The conductive features within the gate electrode level region are defined along at least four different virtual lines of extent in the first parallel direction. A width size of the conductive features within the gate electrode level region is measured perpendicular to the first parallel direction and is less than a wavelength of light used in a photolithography process to fabricate the conductive features.