Caracterisation optique et physique de ZnSe. Etude des macles et des deformations thermoelastiques d'une couche ZnSe sur un substrat. Etude des excitons libres dans des films de ZnSe, des impuretes et defauts dans la couche de ZnSe epitaxique, et de leurs proprietes optiques non lineaires

Optical Properties of ZnSe Epilayers and Films

Atomic layer epitaxy of zinc chalcogenide single crystalline films on a (001) GaAs substrate is studied. It is observed that the average thickness per one cycle of opening and closing the shutters of the constituent elements corresponds to one monolayer thickness. The initial and successive stages of the epitaxy are investigated by reflection high‐energy electron diffraction. Three‐dimensional growth mechanism dominates at the initial stage of the heteroepitaxy, while pseudo‐two‐dimensional growth mechanism dominates after the deposition of more than 1000 monolayers. However, the growth of ZnSe on ZnTe and vice versa is dominated by the two‐dimensional growth mechanism.

Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

The role of impurities in refined ZnSe and other II VI semiconductors

Metal‐semiconductor surface barriers were formed by epitaxially grown Al(001) on GaAs(001) with MBE at room temperature. The diodes exhibit nearly ideal electrical characteristics. It is also demonstrated that different barrier heights may be achieved by growing Al layers on MBE GaAs surfaces with different surface stoichiometries.

Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs

This article reviews the major physico-chemical aspects of molecular beam epitaxy (MBE), especially as applied to the deposition of thin epitaxial films of III-V compound and alloy semiconductors. The experimental requirements to achieve the necessary levels of control, purity and uniformity are described first to establish the basic features of the technique. This is followed by a rather detailed treatment of the growth process, including thermodynamic considerations, surface reaction kinetics and film growth dynamics. Because MBE provides a unique means of preparing clean surfaces having controlled stoichiometry and reconstruction, the evaluation of their crystallographic and electronic structure is dealt with at some length. The structure and composition of semiconductor-semiconductor interfaces, together with the formation of quantum wells and periodic superlattices, are topics of increasing importance and as such also receive considerable attention. Dopant incorporation is dealt with rather more briefly by reference to specific examples and finally some mention is made of materials other than III-V semiconductors which have been prepared by MBE.

https://iopscience.iop.org/article/10.1088/0034-4885/48/12/002/pdf

Molecular beam epitaxy

Molecular beam epitaxy of zinc chalcogenides

Single‐crystalline films of low‐resistivity ZnSe have been successfully grown by molecular beam epitaxy (MBE). The film shows good crystallinity, having a smooth and flat surface as revealed by RHEED and SEM investigations. The resistivity of as‐grown MBE ZnSe is low (typically ∼1 Ω cm) and the mobility of the film is relatively high (typically ∼300 cm2/V sec) at room temperature. The concentrations of the residual electrically active donor and acceptor centers are ND =8×1016 cm−3 and NA=6×1016 cm−3, respectively. The strong blue band‐edge photoluminescence peak is observed even at room temperature, and the luminescence intensity at longer wavelength is very weak.

Molecular beam epitaxial growth of low‐resistivity ZnSe films

Molecular beam epitaxy of ZnSexTe1−x (0 ≲ x ≲ 1)

Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy

Thin films of ZnTe single crystal were grown successfully on germanium substrates by molecular beam epitaxy. The epitaxy condition and evaluation of the grown films were extensively investigated. The evaluation and the analysis were made with a scanning electron microscope, an ion microprobe analyser, an electron-probe microanalyser, and measurements of the current-voltage characteristics and photoluminescence spectra. Twin-free and stoichiometric ZnTe films with smooth and flat surface were grown at the growth rate less than 2 A/sec and for the substrate temperatures between 360°C and 400°C. Photoluminescence spectra of the films show sharp near-band-edge emission bands.

https://iopscience.iop.org/article/10.1143/JJAP.15.1001/pdf

Shigeru Maekawa

Papers

Molecular beam epitaxy of zinc chalcogenides

Molecular beam epitaxial growth of low‐resistivity ZnSe films

Molecular beam epitaxy of ZnSexTe1−x (0 ≲ x ≲ 1)

Growth Rate and Sticking Coefficient of ZnSe and ZnTe Grown by Molecular Beam Epitaxy

Molecular Beam Epitaxy of ZnTe Single Crystal Thin Films