S
Shigeru Nakagawa
Researcher at Hewlett-Packard
Publications - 10
Citations - 745
Shigeru Nakagawa is an academic researcher from Hewlett-Packard. The author has contributed to research in topics: Laser & Semiconductor laser theory. The author has an hindex of 8, co-authored 10 publications receiving 726 citations.
Papers
More filters
Journal ArticleDOI
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Tetsuya Takeuchi,Christian Wetzel,Shigeo Yamaguchi,Hiromitsu Sakai,Hiroshi Amano,Isamu Akasaki,Yawara Kaneko,Shigeru Nakagawa,Yoshifumi Yamaoka,Norihide Yamada +9 more
TL;DR: In this article, the piezoelectric field points from the growth surface to the substrate and its magnitude is 1.2 MV/cm for Ga0.84In0.16N/GaN quantum wells on sapphire substrate.
Journal ArticleDOI
Second-harmonic generation from GaAs/AlAs vertical cavity
TL;DR: In this article, second-harmonic generation in a GaAs/AlAs vertical cavity grown on a (311)B GaAs substrate was demonstrated and its efficiency was measured to be 1.4×10−4 %/W.
Journal ArticleDOI
Second-Harmonic Generation in Vertical-Cavity Surface-Emitting Laser
Norihide Yamada,Yoshikatsu Ichimura,Shigeru Nakagawa,Yasuhisa Kaneko,Tetsuya Takeuchi,Nobuo Mikoshiba +5 more
TL;DR: In this paper, a short-wavelength compact laser is proposed, in which second-harmonic coherent light is produced by converting fundamental light lased in a vertical-cavity surface-emitting laser.
Journal ArticleDOI
Blue vertical-cavity surface-emitting lasers based on second-harmonic generation grown on (311)B and (411)A GaAs substrates
Yasuhisa Kaneko,Shigeru Nakagawa,Yoshikatsu Ichimura,Norihide Yamada,Dan E. Mars,Tetsuya Takeuchi +5 more
TL;DR: Takahashi et al. as mentioned in this paper studied blue vertical-cavity surface-emitting lasers (VCSELs) based on second-harmonic generation (SHG) grown on (411)A and (311)B GaAs substrates in order to investigate suitable substrate orientations for SHG-VLSELs.
Journal ArticleDOI
InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate
TL;DR: InGaAs/GaAs vertical cavity topemitting dielectric-mirror surface-emitting lasers have been fabricated on a GaAs-GaAs-VMs as discussed by the authors.